Polarization effects due to thickness fluctuations in nonpolar InGaN/GaN quantum wells

2013 ◽  
Vol 103 (7) ◽  
pp. 073115 ◽  
Author(s):  
Oliver Marquardt ◽  
Tilmann Hickel ◽  
Jörg Neugebauer ◽  
Chris G. Van de Walle
Keyword(s):  
Quantum Wells ◽  
Polarization Effects

scholarly journals Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells

2001 ◽  
Vol 79 (26) ◽  
pp. 4375-4377 ◽  
Author(s):  
E. Kuokstis ◽  
J. Zhang ◽  
M.-Y. Ryu ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Polarization Effects

POLARIZATION EFFECTS IN NITRIDE SEMICONDUCTOR HETEROSTRUCTURES

2000 ◽  
Vol 10 (01) ◽  
pp. 25-37 ◽  
Author(s):  
HADIS MORKOÇ ◽  
ROBERTO CINGOLANI ◽  
F. DELLA SALA ◽  
A. DICARLO ◽  
P. LUGLI ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Wide Bandgap ◽  
Semiconductor Heterostructures ◽  
Stable Form ◽  
Multiple Quantum ◽  
Nitride Semiconductors ◽  
Polarization Effects ◽  
Polarization Charge ◽  
Ionic Nature ◽  
High Level

Wide bandgap nitride semiconductors have recently attracted a high level of attention owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum and favorable transport properties, coupled with large dielectric strengths which pave the way for excellent emitters, detectors, and power amplifiers. Owing to the ionic nature of these semiconductors coupled with the lack of inversion symmetry in the wurtzitic form, which is the more stable form, spontaneous polarization charge at heterointerfaces and piezoelectric polarization charge due to strain are induced. In this paper, following a description of these effects, their impact on sample modulation-doped structures and multiple quantum wells are discussed.

scholarly journals Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures

2000 ◽  
Vol 5 (S1) ◽  
pp. 957-969
Author(s):  
C. Wetzel ◽  
T. Takeuchi ◽  
H. Amano ◽  
I. Akasaki
Keyword(s):  
Quantum Wells ◽  
Reflection Spectroscopy ◽  
Polarization Effects ◽  
Group Iii ◽  
Barrier Heights ◽  
Device Applications ◽  
Important Input ◽  
Splitting Energy ◽  
Group Iii Nitride ◽  
Transport Device

Uniaxial wurtzite group-III nitride heterostructures are subject to large polarization effects with significant consequences for device physics in optoelectronic and transport device applications. A central aspect for the proper implementation is the experimental quantification of polarization charges and associated fields. In modulated reflection spectroscopy of thin films and heterostructures of AlGaInN we observe pronounced Franz-Keldysh oscillations that allow direct and accurate readings of the field strength induced by polarization dipoles at the heterointerfaces. In piezoelectric GaInN/GaN quantum wells this dipole is found to induce an asymmetry in barrier heights with a respective splitting of interband transitions. This splitting energy appears to reflect in the transitions of spontaneous and stimulated luminescence in the well. From these experiments the polarization dipole is identified as controllable type-II staggered band offset between adjacent barrier layers which can extend the flexibility in AlGaInN bandstructure design. The derived field values can serve as important input parameters in the further interpretation of the entire system.

Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells

2001 ◽  
Vol 228 (2) ◽  
pp. 559-562 ◽  
Author(s):  
E. Kuokstis ◽  
Jianping Zhang ◽  
J.W. Yang ◽  
G. Simin ◽  
M. Asif Khan ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Polarization Effects ◽  
Uv Emission

Polarization effects on quantum levels in InN/GaN quantum wells

2009 ◽  
Vol 20 (48) ◽  
pp. 485204 ◽  
Author(s):  
Wei Lin ◽  
Shuping Li ◽  
Junyong Kang
Keyword(s):  
Quantum Wells ◽  
Polarization Effects
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