Low power consumption resistance random access memory with Pt/InOx/TiN structure

2013 ◽  
Vol 103 (10) ◽  
pp. 102903 ◽  
Author(s):  
Jyun-Bao Yang ◽  
Ting-Chang Chang ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
Hsueh-Chih Tseng ◽  
...  
2008 ◽  
Vol 93 (11) ◽  
pp. 113504 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hidenobu Muramatsu ◽  
Hiro Akinaga ◽  
Yukio Tamai ◽  
...  

2014 ◽  
Vol 543-547 ◽  
pp. 463-466 ◽  
Author(s):  
Xi Fan ◽  
Hou Peng Chen ◽  
Qian Wang ◽  
Yi Feng Chen ◽  
Zhi Tang Song ◽  
...  

A low-power 1Kb phase change random access memory (PCRAM) chip is designed. The chip uses 1T1R (one transistor one resistor) structure and titanium nitride (TiN) bottom electrode (BE) for reducing power consumption. Besides, the write property of the chip is improved by employing a ramp down pulse generator. The chip is fabricated in 130nm CMOS standard technology. The test result shows a 56% power reduction based on TiN BE compared with tungsten (W) BE, which predicts a new direction to realize the commercialization of PCRAM.


2013 ◽  
Vol 114 (23) ◽  
pp. 234501 ◽  
Author(s):  
Rui Zhang ◽  
Tsung-Ming Tsai ◽  
Ting-Chang Chang ◽  
Kuan-Chang Chang ◽  
Kai-Huang Chen ◽  
...  

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