Voltage polarity dependent low-power and high-speed resistance switching in CoO resistance random access memory with Ta electrode

2008 ◽  
Vol 93 (11) ◽  
pp. 113504 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hidenobu Muramatsu ◽  
Hiro Akinaga ◽  
Yukio Tamai ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Voltage Polarity ◽  
Resistance Random Access Memory

Reproducible Resistance Switching in Ni/NiO/Ni Trilayer

2007 ◽  
Vol 997 ◽  
Author(s):  
Hisashi Shima ◽  
Fumiyoshi Takano ◽  
Hiro Akinaga ◽  
Isao H Inoue ◽  
Hidenori Takagi
Keyword(s):  
Thin Film ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Pt Electrode ◽  
Resistance Random Access Memory ◽  
Nio Thin Film ◽  
Non Volatile Memory

AbstractThe resistance random access memory is attracting much attention as a high-density and high-speed non-volatile memory, having large resistance switching ration and good affinity with the conventional CMOS technologies. We demonstrate the resistance switching in the NiO thin film without using Pt electrode.

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Ultrahigh performance negative thermal-resistance switching based on individual ZnO:K, Cl micro/nanowires for multibit nonvolatile resistance random access memory dual-written/erased repeatedly by temperature or bias

2015 ◽  
Vol 3 (47) ◽  
pp. 12220-12229 ◽  
Author(s):  
Jie Zhao ◽  
Baochang Cheng ◽  
Yanhe Xiao ◽  
Rui Guo ◽  
Shuijin Lei
Keyword(s):  
Thermal Resistance ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Access Memory ◽  
Terminal Device ◽  
Resistance Random Access Memory

Nonvolatile multibit sensor and memory written/erased by temperature or bias is realized in two-terminal device based on individual ZnO : K, Cl micro/nanowire.

scholarly journals Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory

2020 ◽  
Vol 8 ◽  
pp. 674-680 ◽  
Author(s):  
Xiang Li ◽  
Shy-Jay Lin ◽  
Mahendra Dc ◽  
Yu-Ching Liao ◽  
Chengyang Yao ◽  
...  
Keyword(s):  
Low Power ◽  
High Speed ◽  
Random Access ◽  
Random Access Memory ◽  
Spin Orbit ◽  
Access Memory ◽  
Magnetic Random Access Memory

Low power consumption resistance random access memory with Pt/InOx/TiN structure

2013 ◽  
Vol 103 (10) ◽  
pp. 102903 ◽  
Author(s):  
Jyun-Bao Yang ◽  
Ting-Chang Chang ◽  
Jheng-Jie Huang ◽  
Yu-Ting Chen ◽  
Hsueh-Chih Tseng ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Random Access ◽  
Random Access Memory ◽  
Low Power Consumption ◽  
Access Memory ◽  
Resistance Random Access Memory
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