Extending the 3ω method: Thermal conductivity characterization of thin films

2013 ◽  
Vol 84 (8) ◽  
pp. 084904 ◽  
Author(s):  
Nico Bodenschatz ◽  
André Liemert ◽  
Sebastian Schnurr ◽  
Ulf Wiedwald ◽  
Paul Ziemann
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
3Ω Method

Anisotropic Thermal Conductivity of a Si/Ge Quantum Dot Superlattice

2000 ◽  
Author(s):  
Theodorian Borca-Tasciuc ◽  
Weili Liu ◽  
Jianlin Liu ◽  
Kang L. Wang ◽  
Gang Chen
Keyword(s):  
Thermal Conductivity ◽  
Quantum Dots ◽  
Molecular Beam ◽  
Conductivity Measurements ◽  
Transport Models ◽  
3Ω Method ◽  
Superlattice Structure ◽  
Anisotropic Thermal Conductivity ◽  
Ge Quantum Dot

Abstract In this work, we present experimental results on the in-plane and cross-plane thermal conductivity characterization of a Si/Ge quantum-dots superlattice structure. The quantum-dots superlattice was grown by molecular-beam-epitaxy and self-organization. The anisotropic thermal conductivity measurements are performed by a differential two-wire 3ω method. The measured in-plane and cross-plane thermal conductivity values show a different temperature behavior. The results are compared and explained with heat transport models in superlattices.

Long-term Room Temperature Instability in Thermal Conductivity of InGaZnO Thin Films

MRS Advances ◽  
2016 ◽  
Vol 1 (22) ◽  
pp. 1631-1636 ◽  
Author(s):  
Boya Cui ◽  
D. Bruce Buchholz ◽  
Li Zeng ◽  
Michael Bedzyk ◽  
Robert P. H. Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Room Temperature ◽  
Storage Time ◽  
Laser Deposition ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
3Ω Method ◽  
X Ray

ABSTRACTThe cross-plane thermal conductivities of InGaZnO (IGZO) thin films in different morphologies were measured on three occasions within 19 months, using the 3ω method at room temperature 300 K. Amorphous (a-), semi-crystalline (semi-c-) and crystalline (c-) IGZO films were grown by pulsed laser deposition (PLD), followed by X-ray diffraction (XRD) for evaluation of film quality and crystallinity. Semi-c-IGZO shows the highest thermal conductivity, even higher than the most ordered crystal-like phase. After being stored in dry low-oxygen environment for months, a drastic decrease of semi-c-IGZO thermal conductivity was observed, while the thermal conductivity slightly reduced in c-IGZO and remained unchanged in a-IGZO. This change in thermal conductivity with storage time can be attributed to film structural relaxation and vacancy diffusion to grain boundaries.

Measurement of thermal conductivity of silicon dioxide thin films using a 3ω method

2002 ◽  
Vol 91 (12) ◽  
pp. 9772 ◽  
Author(s):  
Tsuneyuki Yamane ◽  
Naoto Nagai ◽  
Shin-ichiro Katayama ◽  
Minoru Todoki
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Silicon Dioxide ◽  
3Ω Method

Thermal conductivity of Gd 2 Zr 2 O 7 thin films at various temperatures by using the 3ω method

2017 ◽  
Vol 641 ◽  
pp. 34-37 ◽  
Author(s):  
Ji Hye Kwak ◽  
Jun Gu Kang ◽  
Ho-Soon Yang ◽  
Euh Duck Jeong ◽  
Hyun Gyu Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
3Ω Method

Characterization of the thermal conductivity of insulating thin films by scanning thermal microscopy

2013 ◽  
Vol 44 (11) ◽  
pp. 1029-1034 ◽  
Author(s):  
Séverine Gomès ◽  
Pascal Newby ◽  
Bruno Canut ◽  
Konstantinos Termentzidis ◽  
Olivier Marty ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Scanning Thermal Microscopy ◽  
Thermal Microscopy

scholarly journals Microstructure and Materials Properties of Understoichiometric TiBx Thin Films Grown by HiPIMS

2020 ◽  
Author(s):  
Jimmy Thörnberg ◽  
Justinas Palisaitis ◽  
Niklas Hellgren ◽  
Fedor Klimashin ◽  
Naureen Ghafoor ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Conductivity ◽  
Fracture Toughness ◽  
Planar Defects ◽  
Materials Properties ◽  
Apparent Fracture Toughness ◽  
Research Article ◽  
Tissue Phase

<p>In the present research article we report synthesis of TiB<sub>x</sub>, 1.43<i>n-situ</i> mass- and energy-spectroscopy is used to explain the obtained compositional range. Excess B in overstoichiometric TiB<i><sub>x</sub></i><sub> </sub>thin films from DCMS results in a hardness up to 37.7±0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase separating stoichiometric TiB<sub>2</sub> columnar structures. With a particular focus on characterization of the understoichiometric samples, we show that understoichiometric TiB<sub>1.43</sub> thin films synthesized by HiPIMS exhibit a superior hardness of 43.9±0.9 GPa, where the deficiency of B is found to be accommodated by Ti planar defects. The apparent fracture toughness, electrical resistivity and thermal conductivity of the same sample is 4.2±0.1 MPa√m, 367±7 μΩ·cm and 5.1 W/(m.K), respectively, as compared to corresponding values for overstoichiometric TiB<sub>2.20</sub> DCMS thin film samples of 3.2±0.1 MPa√m, 309±4 μΩ·cm and 3.0 W/(m.K). </p>

Characterization of very low thermal conductivity thin films

2013 ◽  
Vol 115 (2) ◽  
pp. 1541-1550 ◽  
Author(s):  
M. T. Alam ◽  
S. King ◽  
M. A. Haque
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Low Thermal Conductivity
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