The creep process of the domain switching in poly(vinylidene fluoride-trifluoroethylene) ferroelectric thin films

2013 ◽  
Vol 103 (4) ◽  
pp. 042909 ◽  
Author(s):  
B. B. Tian ◽  
Z. H. Chen ◽  
A. Q. Jiang ◽  
X. L. Zhao ◽  
B. L. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Domain Switching ◽  
Ferroelectric Thin Films ◽  
Creep Process ◽  
Poly Vinylidene Fluoride

scholarly journals Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films

2013 ◽  
Vol 12 (5) ◽  
pp. 433-438 ◽  
Author(s):  
Mengyuan Li ◽  
Harry J. Wondergem ◽  
Mark-Jan Spijkman ◽  
Kamal Asadi ◽  
Ilias Katsouras ◽  
...  
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Thin Films ◽  
Solution Processed ◽  
Poly Vinylidene Fluoride ◽  
Δ Phase

Structure Change of Poly(Vinylidene Fluoride-Trifluoroethylene) Ferroelectric Thin Films on Different Electrodes

2010 ◽  
Vol 405 (1) ◽  
pp. 183-187
Author(s):  
P. F. Liu ◽  
X. J. Meng ◽  
J. L. Wang ◽  
J. H. Chu ◽  
P. Gemeiner ◽  
...  
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Structure Change ◽  
Ferroelectric Thin Films ◽  
Poly Vinylidene Fluoride

Effect of Interface and Crystallinity on the Ferroelectric Properties of Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer Thin Films

2001 ◽  
Vol 665 ◽  
Author(s):  
Feng Xia ◽  
H.S. Xu ◽  
Babak Razavi ◽  
Q. M. Zhang
Keyword(s):  
Thin Films ◽  
Vinylidene Fluoride ◽  
Ferroelectric Properties ◽  
Large Change ◽  
Thickness Dependence ◽  
Dielectric Measurement ◽  
Switching Speed ◽  
Wide Range ◽  
Poly Vinylidene Fluoride ◽  
Polarization Level

ABSTRACTFerroelectric polymer thin films are attractive for a wide range of applications such as MEMS, IR sensors, and memory devices. We present the results of a recent investigation on the thickness dependence of the ferroelectric properties of poly(vinylidene fluoridetrifluoroethylene) copolymer spin cast films on electroded Si substrate. We show that as the film thickness is reduced, there exist two thickness regions. For films at thickness above 100 nm, the thickness dependence of the ferroelectric properties can be attributed to the interface effect. However, for thinner films, there is a large change in the ferroelectric properties such as the polarization level, the coercive field, and polarization switching speed, which is related to the large drop of the crystallinity in the ultrathin film region (below 100 nm). The results from Xray, dielectric measurement, and AFM all indicate that there is a threshold thickness at about 100 nm below which the crystallinity in the film reduces abruptly.

Residual stress in piezoelectric poly(vinylidene-fluoride-co-trifluoroethylene) thin films deposited on silicon substrates

2010 ◽  
Vol 519 (4) ◽  
pp. 1441-1444 ◽  
Author(s):  
Sharon Roslyn Oh ◽  
Kui Yao ◽  
Choi Lan Chow ◽  
Francis Eng Hock Tay
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Vinylidene Fluoride ◽  
Silicon Substrates ◽  
Poly Vinylidene Fluoride
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