Low dark current small molecule organic photodetectors with selective response to green light

2013 ◽  
Vol 103 (4) ◽  
pp. 043305 ◽  
Author(s):  
Dong-Seok Leem ◽  
Kwang-Hee Lee ◽  
Kyung-Bae Park ◽  
Seon-Jeong Lim ◽  
Kyu-Sik Kim ◽  
...  
2016 ◽  
Vol 55 (9) ◽  
pp. 091601 ◽  
Author(s):  
Seong Heon Kim ◽  
Sung Heo ◽  
Dong-Jin Yun ◽  
Ryu-ichi Satoh ◽  
Gyeongsu Park ◽  
...  

2020 ◽  
Vol 8 (17) ◽  
pp. 2000519 ◽  
Author(s):  
Chih‐Chien Lee ◽  
Richie Estrada ◽  
Ya‐Ze Li ◽  
Sajal Biring ◽  
Nurul Ridho Al Amin ◽  
...  

Nano Today ◽  
2021 ◽  
Vol 37 ◽  
pp. 101081
Author(s):  
Woongsik Jang ◽  
Byung Gi Kim ◽  
Seungju Seo ◽  
Ahmed Shawky ◽  
Min Soo Kim ◽  
...  

2021 ◽  
Vol 42 (2) ◽  
pp. 241-249
Author(s):  
Jian-bin WANG ◽  
◽  
Xiao-sheng TANG ◽  
Bi ZHOU ◽  
Xia-hui ZENG ◽  
...  

Nanoscale ◽  
2019 ◽  
Vol 11 (35) ◽  
pp. 16406-16413 ◽  
Author(s):  
Jianli Miao ◽  
Mingde Du ◽  
Ying Fang ◽  
Fujun Zhang

Acceptor-free photomultiplication-type organic photodetectors were fabricated with a blend of one polymer donor and one small molecule donor as the active layer.


2019 ◽  
Vol 30 (20) ◽  
pp. 1904205 ◽  
Author(s):  
Giulio Simone ◽  
Matthew J. Dyson ◽  
Stefan C. J. Meskers ◽  
René A. J. Janssen ◽  
Gerwin H. Gelinck

2017 ◽  
Vol 8 (23) ◽  
pp. 3612-3621 ◽  
Author(s):  
Seung Hun Eom ◽  
So Youn Nam ◽  
Hee Jin Do ◽  
Jaemin Lee ◽  
Sangho Jeon ◽  
...  

The difluorobenzene-incorporated polymer showed strong ordering in edge-on mode, resulting in a significant reduction in the leakage current, and thus PFBT2OBT:PC70BM devices showed highly improved detectivity of over 1013 Jones at −2V.


2013 ◽  
Vol 650 ◽  
pp. 54-57 ◽  
Author(s):  
Naoki Ohtani ◽  
Shouta Majima

Organic photodiodes operating in the near-infrared (NIR) region with an operating wavelength of about 850 nm, which corresponds to GaAs-based optical devices, were fabricated by wet process. In the active layer, Copper(II)5,9,14,18,23,27,32,36-octabutoxy-2,3-naphthalocyanine was used as NIR absorption material. A wide-bandgap polymer was doped to decrease the dark current, and an n-type organic semiconductor was doped to increase optical sensitivity. To decrease the dark current further, an electron-blocking layer was added onto the anode. This bi-layer structure was found to be very useful for decreasing the dark current. We also evaluated the on/off ratio, which is very important for application to optical communication devices.


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