Dark current reduction strategies using edge-on aligned donor polymers for high detectivity and responsivity organic photodetectors

2017 ◽  
Vol 8 (23) ◽  
pp. 3612-3621 ◽  
Author(s):  
Seung Hun Eom ◽  
So Youn Nam ◽  
Hee Jin Do ◽  
Jaemin Lee ◽  
Sangho Jeon ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dark Current ◽  
Reduction Strategies ◽  
Current Reduction ◽  
Organic Photodetectors

The difluorobenzene-incorporated polymer showed strong ordering in edge-on mode, resulting in a significant reduction in the leakage current, and thus PFBT2OBT:PC70BM devices showed highly improved detectivity of over 1013 Jones at −2V.

Dark current reduction of small molecule organic photodetectors by controlling gap states of molybdenum oxide buffer layers

2016 ◽  
Vol 55 (9) ◽  
pp. 091601 ◽  
Author(s):  
Seong Heon Kim ◽  
Sung Heo ◽  
Dong-Jin Yun ◽  
Ryu-ichi Satoh ◽  
Gyeongsu Park ◽  
...  
Keyword(s):  
Molybdenum Oxide ◽  
Small Molecule ◽  
Dark Current ◽  
Buffer Layers ◽  
Current Reduction ◽  
Gap States ◽  
Organic Photodetectors

Leakage Current Reduction of Ni-MILC Poly-Si TFT Using Chemical Cleaning Method

2018 ◽  
Vol 28 (8) ◽  
pp. 440-444
Author(s):  
Kwang-Jin Lee ◽  
◽  
Doyeon Kim ◽  
Duck-Kyun Choi ◽  
Woo-Byoung Kim
Keyword(s):  
Leakage Current ◽  
Chemical Cleaning ◽  
Cleaning Method ◽  
Current Reduction

Strong dark current suppression in flexible organic photodetectors by carbon nanotube transparent electrodes

Nano Today ◽  
2021 ◽  
Vol 37 ◽  
pp. 101081
Author(s):  
Woongsik Jang ◽  
Byung Gi Kim ◽  
Seungju Seo ◽  
Ahmed Shawky ◽  
Min Soo Kim ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Dark Current ◽  
Transparent Electrodes ◽  
Organic Photodetectors

Organic synaptic devices based on ionic gel with reduced leakage current

2021 ◽  
Vol 57 (15) ◽  
pp. 1907-1910
Author(s):  
Dapeng Liu ◽  
Yiwei Zhao ◽  
Qianqian Shi ◽  
Shilei Dai ◽  
Li Tian ◽  
...  
Keyword(s):  
Solid State ◽  
Leakage Current ◽  
Dielectric Film ◽  
Neuromorphic Computing ◽  
Computing Systems ◽  
Current Reduction

A solid-state hybrid electrolyte dielectric film was designed for leakage current reduction, synaptic simulation and neuromorphic computing systems.

A Single-Phase Five-Level Transformer-Less PV Inverter for Leakage Current Reduction

2021 ◽  
pp. 1-1
Author(s):  
Xiaonan Zhu ◽  
Hongliang Wang ◽  
Wenyuan Zhang ◽  
Hanzhe Wang ◽  
Xiaojun Deng ◽  
...  
Keyword(s):  
Leakage Current ◽  
Single Phase ◽  
Pv Inverter ◽  
Current Reduction

Dark currents of unipolar barrier structures based on mercury cadmium telluride for long-wave inred detectors

2021 ◽  
pp. 3-8
Author(s):  
A.V. Voitsekhovskii ◽  
◽  
S.N. Nesmelov ◽  
S.M. Dzyadukh ◽  
S.A. Dvoretsky ◽  
...  
Keyword(s):  
Cadmium Telluride ◽  
Leakage Current ◽  
Current Density ◽  
Dark Current ◽  
Mercury Cadmium Telluride ◽  
Current Component ◽  
Long Wave ◽  
Dark Currents ◽  
Surface Leakage ◽  
Long Wave Infrared

Two types of long-wave infrared nBn structures based on mercury cadmium telluride grown by molecular beam epitaxy on GaAs (013) substrates have been fabricated. For each type of device, the side walls of the mesa structures were passivated with an Al2O3 dielectric film or left without passivation. The CdTe content in the absorbing layers was 0.20 and 0.21, and in the barrier layers, 0.61 and 0.63. The dark currents of the manufactured devices were studied in a wide range of voltages and temperatures. The values of the surface leakage component are found under various conditions. It has been shown that the surface leakage current density decreases upon passivation with an Al2O3 film. It was found that at room temperature in the fabricated nBn structures with reverse biases, the surface leakage component dominates, and with forward biases, the dark current is determined by the combined effect of the surface leakage component and the bulk current component. From the Arrhenius plots, the values of the activation energies of the surface leakage current component were found, which at small reverse biases are in the range from 0.05 to 0.10 eV. At small reverse biases, upon cooling the samples, the role of the bulk component of the dark current increases, which at 180 K is approximately 0.81 A/cm2. In the temperature range 200-300 K, the values of the dark current density exceed the values calculated according to the empirical Rule07 model by a factor of 10-100, which indicates the possibility of creating long-wave infrared barrier detectors with a decrease in the values of the surface leakage component.

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