Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films

2013 ◽  
Vol 103 (4) ◽  
pp. 042908 ◽  
Author(s):  
Hyung-Woo Ahn ◽  
Doo Seok Jeong ◽  
Byung-ki Cheong ◽  
Hosuk Lee ◽  
Hosun Lee ◽  
...  
Keyword(s):  
Localized States ◽  
Threshold Switching ◽  
Density Of Localized States ◽  
Switching Characteristics

Dependency of threshold switching on density of localized states of Ge2Sb2Te5 thin films for phase change random access memory

2008 ◽  
Vol 93 (17) ◽  
pp. 172114 ◽  
Author(s):  
Seung Wook Ryu ◽  
Jong Ho Lee ◽  
Yong Bae Ahn ◽  
Choon Hwan Kim ◽  
Byung Joon Choi ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Localized States ◽  
Access Memory ◽  
Threshold Switching ◽  
Density Of Localized States

Determination of Density of Localized States in Amorphous Silicon Alloys From the Low Field Conductance of Thin N-I-N Diodes

1985 ◽  
Vol 49 ◽  
Author(s):  
Michael Shur ◽  
Michael Hack
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Bulk Density ◽  
Density Of States ◽  
Energy Gap ◽  
Localized States ◽  
New Technique ◽  
Silicon Alloys ◽  
Low Field ◽  
Density Of Localized States

AbstractWe describe a new technique to determine the bulk density of localized states in the energy gap of amorphous silicon alloys from the temperature dependence of the low field conductance of n-i-n diodes. This new technique allows us to determine the bulk density of states in the centre of a device, and is very straightforward, involving fewer assumptions than other established techniques. Varying the intrinsic layer thickness allows us to measure the,density of states within approximately 400 meV of midgap.We measured the temperature dependence of the low field conductance of an amorphous silicon alloy n-i-n diode with an intrinsic layer thjckness of 0.45 microns and deduced the density of localised states to be 3xlO16cm−3 eV−1 at approximately 0.5 eV below the bottom of the conduction band. We have also considered the high bias region (the space charge limited current regime) and proposed an interpolation formula which describes the current-voltage characteristics of these structures at all biases and agrees well with our computer simulation based on the solution of the complete system of transport equations.

Enhanced switching characteristics of an ovonic threshold switching device with an ultra-thin MgO interfacial layer

2021 ◽  
pp. 1-1
Author(s):  
Jangseop Lee ◽  
Sangmin Lee ◽  
Myonghoon Kwak ◽  
Wooseok Choi ◽  
Oleksandr Mosendz ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Switching Device ◽  
Threshold Switching ◽  
Switching Characteristics

scholarly journals Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices

2019 ◽  
Vol 16 (16) ◽  
pp. 20190404-20190404
Author(s):  
Chandreswar Mahata ◽  
Wonwoo Kim ◽  
Shiwhan Kim ◽  
Muhammad Ismail ◽  
Min-Hwi Kim ◽  
...  
Keyword(s):  
Threshold Switching ◽  
High K ◽  
Switching Characteristics

HOPPING CONDUCTION IN POLYMERS

1994 ◽  
Vol 08 (07) ◽  
pp. 847-854 ◽  
Author(s):  
Heinz Bässler
Keyword(s):  
Charge Transport ◽  
Carrier Mobility ◽  
Localized States ◽  
Time Dependent ◽  
Hopping Conduction ◽  
Moderate Degree ◽  
Density Of Localized States ◽  
Temporal Features ◽  
Gaussian Density ◽  
Energetic Disorder

The concept of hopping within a Gaussian density of localized states introduced earlier to rationalize charge transport in random organic photoconductors is developed further to account for temporal features of time of flight (TOF) signals. At moderate degree of energetic disorder (σ/kT~3.5…4.5) there is a transport regime intermediate between dispersive and quasi-Gaussian type whose signatures are (i) universal TOF signals that can appear weakly dispersive despite yielding a well defined carrier mobility and (ii) an asymmetric propagator of the carrier packet yielding a time dependent diffusivity.

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