Amorphous/crystalline silicon interface defects induced by hydrogen plasma treatments

2013 ◽  
Vol 102 (23) ◽  
pp. 231604 ◽  
Author(s):  
Jonas Geissbühler ◽  
Stefaan De Wolf ◽  
Bénédicte Demaurex ◽  
Johannes P. Seif ◽  
Duncan T. L. Alexander ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Interface Defects ◽  
Plasma Treatments ◽  
Silicon Interface

scholarly journals Improved amorphous/crystalline silicon interface passivation by hydrogen plasma treatment

2011 ◽  
Vol 99 (12) ◽  
pp. 123506 ◽  
Author(s):  
A. Descoeudres ◽  
L. Barraud ◽  
Stefaan De Wolf ◽  
B. Strahm ◽  
D. Lachenal ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Interface Passivation ◽  
Silicon Interface

scholarly journals Hydrogen plasma treatments for passivation of amorphous-crystalline silicon-heterojunctions on surfaces promoting epitaxy

2013 ◽  
Vol 102 (12) ◽  
pp. 122106 ◽  
Author(s):  
Mathias Mews ◽  
Tim F. Schulze ◽  
Nicola Mingirulli ◽  
Lars Korte
Keyword(s):  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Plasma Treatments ◽  
Silicon Heterojunctions

scholarly journals Hydrogen Plasma Treatments of Amorphous/Crystalline Silicon Heterojunctions

2014 ◽  
Vol 55 ◽  
pp. 827-833 ◽  
Author(s):  
Mathias Mews ◽  
Erhard Conrad ◽  
Simon Kirner ◽  
Nicola Mingirulli ◽  
Lars Korte
Keyword(s):  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Plasma Treatments ◽  
Silicon Heterojunctions

Structuring of Silicon Wafer Surfaces on the Sub-100 nm Scale by Hydrogen Plasma Treatments

2003 ◽  
Vol 788 ◽  
Author(s):  
R. Job ◽  
Y. Ma ◽  
A. G. Ulyashin
Keyword(s):  
Hydrogen Plasma ◽  
Structural Defects ◽  
Process Conditions ◽  
Force Microscopy ◽  
Czochralski Silicon ◽  
Atomic Force ◽  
Nano Structures ◽  
Plasma Treatments ◽  
The Impact ◽  
Wafer Surfaces

ABSTRACTHydrogen plasma treatments applied on standard Czochralski silicon (Cz Si) wafers cause a structuring of the surface regions on the sub-100 nm scale, i.e. a thin ‘nano-structured’ Si layer is created up to a depth of ∼ 150 nm. The formation of the ‘nano-structures’ and their evolution in dependence on the process conditions was studied. The impact of post-hydrogenation annealing on the morphology of the structural defects was studied up to 1200 °C. The H-plasma treated and annealed samples were analyzed at surface and sub-surface regions by scanning electron microscopy (SEM), atomic force microscopy (AFM), and μ-Raman spectroscopy.

The Impact of Hydrogen Plasma Treatments at Moderate Temperatures on Sintered Zinc Oxide Samples - Evidence for Hydrogen Induced Nano-Void Formation

2006 ◽  
Vol 957 ◽  
Author(s):  
Reinhart Job
Keyword(s):  
Zinc Oxide ◽  
Oxygen Vacancies ◽  
Hydrogen Plasma ◽  
Void Formation ◽  
Vibration Modes ◽  
Plasma Exposure ◽  
Plasma Treatments ◽  
The Impact ◽  
Substrate Temperatures ◽  
Defect Species

ABSTRACTUsing μ-Raman spectroscopy (μRS) analyses, the impact of hydrogen plasma treatments on sintered zinc oxide (ZnO) samples was investigated. H-plasma exposures (150 W, 13.56 MHz) were carried out for 1 hour at substrate temperatures between 250 °C and 500 °C. μRS reveals that plasma hydrogenated ZnO samples are more defective than non-treated ones. On one hand non-specified defect species are created with a maximal density upon plasma hydrogenation at 350 °C, on the other hand the formation of oxygen vacancies (VO) can be traced. The density of VO defects, appearing upon H-plasma exposure, is not significantly correlated to the applied substrate temperatures. μRS also reveals vibration modes of H2 molecules trapped in nano-voids. The μRS results indicate that those nano-voids are created by the coalescence of VO defects.

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