Temperature-dependent dielectric nonlinearity of relaxor ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 thin films

2013 ◽  
Vol 102 (20) ◽  
pp. 202901 ◽  
Author(s):  
Beihai Ma ◽  
Zhongqiang Hu ◽  
Shanshan Liu ◽  
Sheng Tong ◽  
Manoj Narayanan ◽  
...  
Keyword(s):  
Thin Films ◽  
Relaxor Ferroelectric ◽  
Temperature Dependent ◽  
Dielectric Nonlinearity

Temperature-dependent reversible and irreversible processes in Nb-doped PbZrO3 relaxor ferroelectric thin films

2015 ◽  
Vol 107 (20) ◽  
pp. 202902 ◽  
Author(s):  
Mao Ye ◽  
Haitao Huang ◽  
Tao Li ◽  
Shanming Ke ◽  
Peng Lin ◽  
...  
Keyword(s):  
Thin Films ◽  
Relaxor Ferroelectric ◽  
Ferroelectric Thin Films ◽  
Irreversible Processes ◽  
Temperature Dependent

scholarly journals Direct measurement of the thermoelectric properties of electrochemically deposited Bi2Te3 thin films

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Jose Recatala-Gomez ◽  
Pawan Kumar ◽  
Ady Suwardi ◽  
Anas Abutaha ◽  
Iris Nandhakumar ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Bismuth Telluride ◽  
Indium Tin Oxide ◽  
Seed Layer ◽  
Room Temperature ◽  
Low Cost ◽  
Temperature Dependent ◽  
Temperature Heat ◽  
Electrochemically Deposited

Abstract The best known thermoelectric material for near room temperature heat-to-electricity conversion is bismuth telluride. Amongst the possible fabrication techniques, electrodeposition has attracted attention due to its simplicity and low cost. However, the measurement of the thermoelectric properties of electrodeposited films is challenging because of the conducting seed layer underneath the film. Here, we develop a method to directly measure the thermoelectric properties of electrodeposited bismuth telluride thin films, grown on indium tin oxide. Using this technique, the temperature dependent thermoelectric properties (Seebeck coefficient and electrical conductivity) of electrodeposited thin films have been measured down to 100 K. A parallel resistor model is employed to discern the signal of the film from the signal of the seed layer and the data are carefully analysed and contextualized with literature. Our analysis demonstrates that the thermoelectric properties of electrodeposited films can be accurately evaluated without inflicting any damage to the films.

Extraction of the Coefficient of Thermal Expansion of Thin Films from Buckled Membranes

1998 ◽  
Vol 546 ◽  
Author(s):  
V. Ziebartl ◽  
O. Paul ◽  
H. Baltes
Keyword(s):  
Thin Films ◽  
Finite Element ◽  
Thermal Expansion ◽  
Silicon Nitride ◽  
Excellent Agreement ◽  
Energy Minimization ◽  
Coefficient Of Thermal Expansion ◽  
Temperature Dependent ◽  
Minimization Method ◽  
Energy Minimization Method

AbstractWe report a new method to measure the temperature-dependent coefficient of thermal expansion α(T) of thin films. The method exploits the temperature dependent buckling of clamped square plates. This buckling was investigated numerically using an energy minimization method and finite element simulations. Both approaches show excellent agreement even far away from simple critical buckling. The numerical results were used to extract Cα(T) = α0+α1(T−T0 ) of PECVD silicon nitride between 20° and 140°C with α0 = (1.803±0.006)×10−6°C−1, α1 = (7.5±0.5)×10−9 °C−2, and T0 = 25°C.

scholarly journals Temperature-dependent dynamic moduli of Parylene-C columnar microfibrous thin films

2016 ◽  
Vol 53 ◽  
pp. 89-97 ◽  
Author(s):  
Chandraprakash Chindam ◽  
Nicole R. Brown ◽  
Akhlesh Lakhtakia ◽  
Osama O. Awadelkarim ◽  
Wasim Orfali
Keyword(s):  
Thin Films ◽  
Temperature Dependent ◽  
Dynamic Moduli ◽  
Parylene C
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