Kinetic and Monte Carlo models of thin film coarsening: Cross over from diffusion-coalescence to Ostwald growth modes

2000 ◽  
Vol 112 (4) ◽  
pp. 1966-1974 ◽  
Author(s):  
Alan Lo ◽  
Rex T. Skodje
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Growth Modes ◽  
Diffusion Coalescence

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

Analysis of a Hybrid PV/T Concept Based on Wavelength Selective Films

2013 ◽  
Author(s):  
Tejas U. Ulavi ◽  
Jane H. Davidson ◽  
Tim Hebrink
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Total Energy ◽  
Ray Tracing ◽  
Solar Spectrum ◽  
Photovoltaic Module ◽  
Optical Performance ◽  
Technical Performance ◽  
Compound Parabolic Concentrator ◽  
Pv Modules

The technical performance of a non-tracking hybrid PV/T concept that uses a wavelength selective film is modeled. The wavelength selective film is coupled with a compound parabolic concentrator to reflect and concentrate the infrared portion of the solar spectrum onto a tubular absorber while transmitting the visible portion of the spectrum to an underlying thin-film photovoltaic module. The optical performance of the CPC/selective film is obtained through Monte Carlo Ray-Tracing. The CPC geometry is optimized for maximum total energy generation for a roof-top application. Applied to a rooftop in Phoenix, Arizona USA, the hybrid PV/T provides 20% more energy compared to a system of the same area with independent solar thermal and PV modules, but the increase is achieved at the expense of a decrease in the electrical efficiency from 8.8% to 5.8%.

scholarly journals Inside Back Cover: Monte Carlo Simulations of the Phase Separation of a Copolymer Blend in a Thin Film (ChemPhysChem 3/2015)

ChemPhysChem ◽  
2015 ◽  
Vol 16 (3) ◽  
pp. 691-691
Author(s):  
Zhexiao Wang ◽  
Jing Shao ◽  
Heng Pan ◽  
Xiaoshuang Feng ◽  
Peng Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Phase Separation ◽  
Monte Carlo Simulations ◽  
Back Cover ◽  
Copolymer Blend

scholarly journals Benefits of on-wafer calibration standards fabricated in membrane technology

2011 ◽  
Vol 9 ◽  
pp. 19-26
Author(s):  
M. Rohland ◽  
U. Arz ◽  
S. Büttgenbach
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Electrical Properties ◽  
Monte Carlo Simulations ◽  
Material Properties ◽  
Membrane Technology ◽  
Coplanar Waveguides ◽  
Calibration Standards ◽  
Electromagnetic Waveguide ◽  
Propagation Of Uncertainties

Abstract. In this work we compare on-wafer calibration standards fabricated in membrane technology with standards built in conventional thin-film technology. We perform this comparison by investigating the propagation of uncertainties in the geometry and material properties to the broadband electrical properties of the standards. For coplanar waveguides used as line standards the analysis based on Monte Carlo simulations demonstrates an up to tenfold reduction in uncertainty depending on the electromagnetic waveguide property we look at.

Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas

2005 ◽  
Vol 49 (9) ◽  
pp. 1529-1535 ◽  
Author(s):  
Luca Lucci ◽  
Pierpaolo Palestri ◽  
David Esseni ◽  
Luca Selmi
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Electron Gas ◽  
2D Electron Gas ◽  
Monte Carlo Simulator
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