scholarly journals Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells

AIP Advances ◽  
2013 ◽  
Vol 3 (5) ◽  
pp. 052119 ◽  
Author(s):  
Sabina Abdul Hadi ◽  
Pouya Hashemi ◽  
Nicole DiLello ◽  
Evelina Polyzoeva ◽  
Ammar Nayfeh ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Heterojunction Solar Cells ◽  
Amorphous Si

Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells

2014 ◽  
Vol 558 ◽  
pp. 391-399 ◽  
Author(s):  
Zimeng Cheng ◽  
Alan E. Delahoy ◽  
Zhaoqian Su ◽  
Ken K. Chin
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Steady State ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Defect Level ◽  
Cdte Solar Cells

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

Minority Carrier Lifetime Analysis in the Bulk of Thin-Film Absorbers Using Subbandgap (Two-Photon) Excitation

2013 ◽  
Vol 3 (4) ◽  
pp. 1319-1324 ◽  
Author(s):  
Darius Kuciauskas ◽  
Ana Kanevce ◽  
James M. Burst ◽  
Joel N. Duenow ◽  
Ramesh Dhere ◽  
...  
Keyword(s):  
Thin Film ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Two Photon ◽  
Photon Excitation ◽  
Lifetime Analysis ◽  
Two Photon Excitation

scholarly journals Minority Carrier Lifetime Measurement in Nanowire Based Solar Cells by a Reverse Recovery Transient Method

2014 ◽  
Vol 60 ◽  
pp. 181-190
Author(s):  
M. Daanoune ◽  
D. Kohen ◽  
A. Kaminski-Cachopo ◽  
C. Morin ◽  
P. Faucherand ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurement ◽  
Transient Method

Casting Single Crystal Silicon: Novel Defect Profiles from BP Solar's Mono2 TM Wafers

2007 ◽  
Vol 131-133 ◽  
pp. 1-8 ◽  
Author(s):  
Nathan Stoddard ◽  
Bei Wu ◽  
Ian Witting ◽  
Magnus C. Wagener ◽  
Yongkook Park ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystal Growth ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Single Crystal Silicon ◽  
Minority Carrier Lifetime ◽  
Crystal Silicon ◽  
Growth Method ◽  
Screen Print ◽  
The Impact

A novel crystal growth method has been developed for the production of ingots, bricks and wafers for solar cells. Monocrystallinity is achievable over large volumes with minimal dislocation incorporation. The resulting defect types, densities and interactions are described both microscopically for wafers and macroscopically for the ingot, looking closely at the impact of the defects on minority carrier lifetime. Solar cells of 156 cm2 size have been produced ranging up to 17% in efficiency using industrial screen print processes.

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