Steady state minority carrier lifetime and defect level occupation in thin film CdTe solar cells

2014 ◽  
Vol 558 ◽  
pp. 391-399 ◽  
Author(s):  
Zimeng Cheng ◽  
Alan E. Delahoy ◽  
Zhaoqian Su ◽  
Ken K. Chin
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Steady State ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Defect Level ◽  
Cdte Solar Cells

Spatial uniformity of minority‐carrier lifetime in polycrystalline CdTe solar cells

1994 ◽  
Vol 64 (21) ◽  
pp. 2879-2881 ◽  
Author(s):  
R. K. Ahrenkiel ◽  
B. M. Keyes ◽  
D. L. Levi ◽  
K. Emery ◽  
T. L. Chu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cdte Solar Cells ◽  
Spatial Uniformity

Tailoring Impurity Distribution in Polycrystalline CdTe Solar Cells for Enhanced Minority Carrier Lifetime

2013 ◽  
Vol 4 (7) ◽  
pp. 1301400 ◽  
Author(s):  
Lukas Kranz ◽  
Christina Gretener ◽  
Julian Perrenoud ◽  
Dominik Jaeger ◽  
Stephan S. A. Gerstl ◽  
...  
Keyword(s):  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Impurity Distribution ◽  
Cdte Solar Cells

scholarly journals Effect of germanium fraction on the effective minority carrier lifetime in thin film amorphous-Si/crystalline-Si1xGex/crystalline-Si heterojunction solar cells

AIP Advances ◽  
2013 ◽  
Vol 3 (5) ◽  
pp. 052119 ◽  
Author(s):  
Sabina Abdul Hadi ◽  
Pouya Hashemi ◽  
Nicole DiLello ◽  
Evelina Polyzoeva ◽  
Ammar Nayfeh ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Heterojunction Solar Cells ◽  
Amorphous Si

Minority carrier lifetime of silicon solar cells from quasi-steady-state photoluminescence

2011 ◽  
Vol 95 (7) ◽  
pp. 1979-1982 ◽  
Author(s):  
J.A. Giesecke ◽  
B. Michl ◽  
F. Schindler ◽  
M.C. Schubert ◽  
W. Warta
Keyword(s):  
Solar Cells ◽  
Steady State ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Silicon Solar Cells ◽  
Quasi Steady State

Development of High-Performance GaAs Solar Cells on Large-Grain Polycrystalline Ge Substrates

1995 ◽  
Vol 403 ◽  
Author(s):  
R. Venkatasubramanian ◽  
B. O'Quinn ◽  
J. S. Hills ◽  
M. L. Timmons ◽  
D. P. Malta
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cross Sectional ◽  
Plan View ◽  
Electron Beam Induced Current ◽  
Induced Defects

AbstractThe characterization of MOCVD-grown GaAs-AlGaAs materials and GaAs p+n junctions on poly-Ge substrates is presented. Minority carrier lifetime in GaAs-AIGaAs double-hetero (DH) structures grown on these substrates and the variation of lifetimes across different grainstructures are discussed. Minority-carrier diffusion lengths in polycrystalline GaAs p+-n junctions were evaluated by cross-sectional electron-beam induced current (EBIC) scans. The junctions were also studied by plan-view EBIC imaging. Optimization studies of GaAs solar cell on poly-Ge are discussed briefly. The effect of various polycrystalline substrate-induced defects on performance of GaAs solar cells are presented.

Sign in / Sign up

Export Citation Format

Share Document