Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy

2013 ◽  
Vol 113 (17) ◽  
pp. 174903 ◽  
Author(s):  
K. L. Schulte ◽  
A. W. Wood ◽  
R. C. Reedy ◽  
A. J. Ptak ◽  
N. T. Meyer ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy of GaN boules using high growth rates

2010 ◽  
Vol 312 (18) ◽  
pp. 2537-2541 ◽  
Author(s):  
E. Richter ◽  
U. Zeimer ◽  
S. Hagedorn ◽  
M. Wagner ◽  
F. Brunner ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
D.M. Hansen ◽  
Marek P. Boleslawski ◽  
K.L. Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Environment ◽  
Gallium Chloride ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate

AbstractEpitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Improvement of AlN crystalline quality with high epitaxial growth rates by hydride vapor phase epitaxy

2007 ◽  
Vol 305 (2) ◽  
pp. 355-359 ◽  
Author(s):  
Toru Nagashima ◽  
Manabu Harada ◽  
Hiroyuki Yanagi ◽  
Hiroyuki Fukuyama ◽  
Yoshinao Kumagai ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Vapor Phase ◽  
Growth Rates ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Crystalline Quality

Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization

1998 ◽  
Vol 84 (3) ◽  
pp. 1572-1578 ◽  
Author(s):  
J. Mimila-Arroyo ◽  
J. Dı́az-Reyes ◽  
A. Lusson
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Growth Kinetics ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy

scholarly journals Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

1999 ◽  
Vol 4 (S1) ◽  
pp. 465-470
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
D.M. Hansen ◽  
Marek P. Boleslawski ◽  
K.L. Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Environment ◽  
Gallium Chloride ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate

Epitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

High growth rates of AlN and AlGaN on 8″ silicon wafer using metal-organic vapor phase epitaxy reactor

2013 ◽  
Vol 10 (11) ◽  
pp. 1353-1356 ◽  
Author(s):  
Akinori Ubukata ◽  
Yoshiki Yano ◽  
Yuya Yamaoka ◽  
Yuichiro Kitamura ◽  
Toshiya Tabuchi ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy

1999 ◽  
Vol 595 ◽  
Author(s):  
T. S. Kuan ◽  
C. K. Inoki ◽  
Y. Hsu ◽  
D. L. Harris ◽  
R. Zhang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Shear Stress ◽  
Vapor Phase ◽  
Large Angle ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Lateral Growth ◽  
Lateral Growth Rate ◽  
Edge Dislocations

AbstractWe have carried out a series of lateral epitaxial overgrowths (LEO) of GaN through thin oxide windows by the hydride vapor phase epitaxy (HVPE) technique at different growth temperatures. High lateral growth rate at 1100°C allows coalescing of neighboring islands into a continuous and flat film, while the lower lateral growth rate at 1050°C produces triangular-shaped ridges over the growth windows. In either case, threading dislocations bend into laterally grown regions to relax the shear stress developed in the film during growth. In regions close to the mask edge, where the shear stress is highest, dislocations interact and multiply into arrays of edge dislocations lying parallel to the growth window. This multiplication and pileup of dislocations cause a large-angle tilting of the laterally grown regions. The tilt angle is high (∼8 degrees) when the growth is at 1050°C and becomes smaller (3-5 degrees) at 1100°C. At the coalescence of growth facets, a tilt-type grain boundary is formed. During the high-temperature lateral growth, the tensile stress in the GaN seed layer and the thermal stress from the mask layer both contribute to a high shear stress at the growth facets. Finite element stress simulations suggest that this shear stress may be sufficient to cause the observed excessive dislocation activities and tilting of LEO regions at high growth temperatures.

Organometallic vapor‐phase epitaxy of high‐quality Ga0.51In0.49P at high growth rates

1989 ◽  
Vol 66 (11) ◽  
pp. 5384-5387 ◽  
Author(s):  
D. S. Cao ◽  
A. W. Kimball ◽  
G. S. Chen ◽  
K. L. Fry ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality
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