Indium phosphide vapor phase epitaxy at high growth rates, growth kinetics, and characterization

1998 ◽  
Vol 84 (3) ◽  
pp. 1572-1578 ◽  
Author(s):  
J. Mimila-Arroyo ◽  
J. Dı́az-Reyes ◽  
A. Lusson
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Growth Kinetics ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy

High growth rates of AlN and AlGaN on 8″ silicon wafer using metal-organic vapor phase epitaxy reactor

2013 ◽  
Vol 10 (11) ◽  
pp. 1353-1356 ◽  
Author(s):  
Akinori Ubukata ◽  
Yoshiki Yano ◽  
Yuya Yamaoka ◽  
Yuichiro Kitamura ◽  
Toshiya Tabuchi ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Organometallic vapor‐phase epitaxy of high‐quality Ga0.51In0.49P at high growth rates

1989 ◽  
Vol 66 (11) ◽  
pp. 5384-5387 ◽  
Author(s):  
D. S. Cao ◽  
A. W. Kimball ◽  
G. S. Chen ◽  
K. L. Fry ◽  
G. B. Stringfellow
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
High Quality

Hydride vapor phase epitaxy of GaN boules using high growth rates

2010 ◽  
Vol 312 (18) ◽  
pp. 2537-2541 ◽  
Author(s):  
E. Richter ◽  
U. Zeimer ◽  
S. Hagedorn ◽  
M. Wagner ◽  
F. Brunner ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Heteroepitaxy of GaAs on (001) ⇒ 6° Ge substrates at high growth rates by hydride vapor phase epitaxy

2013 ◽  
Vol 113 (17) ◽  
pp. 174903 ◽  
Author(s):  
K. L. Schulte ◽  
A. W. Wood ◽  
R. C. Reedy ◽  
A. J. Ptak ◽  
N. T. Meyer ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Rates ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

1998 ◽  
Vol 537 ◽  
Author(s):  
R. Zhang ◽  
L. Zhang ◽  
D.M. Hansen ◽  
Marek P. Boleslawski ◽  
K.L. Chen ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Growth Temperature ◽  
High Growth ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Epitaxial Lateral Overgrowth ◽  
Growth Environment ◽  
Gallium Chloride ◽  
Lateral Overgrowth ◽  
Lateral Growth Rate

AbstractEpitaxial lateral overgrowth (ELO) of GaN on SiO2-masked (0001) GaN substrates has been investigated by using chloride-based growth chemistries via hydride vapor phase epitaxy (HVPE) and metal organic vapor phase epitaxy (MOVPE). Diethyl gallium chloride, (C2H5)2GaCl, was used in as the MOVPE Ga precursor. The lateral and vertical growth rates as well as the overgrowth morphology of ELO GaN structures are dependent on growth temperature, V/III ratio and the in-plane orientation of the mask opening. A high growth temperature and low V/III ratio increase the lateral growth rate and produce ELO structures with a planar surface to the GaN prisms. High-quality coalesced and planar ELO GaN has been fabricated by both growth chemistries. The use of the diethyl gallium chloride source allows for the benefits of HVPE growth to be realized within the MOVPE growth environment.

Structure of arsenic-treated indium phosphide (001) surfaces during metalorganic vapor-phase epitaxy

2002 ◽  
Vol 66 (4) ◽  
Author(s):  
D. C. Law ◽  
Y. Sun ◽  
C. H. Li ◽  
S. B. Visbeck ◽  
G. Chen ◽  
...  
Keyword(s):  
Indium Phosphide ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

Optimization of Reactor Geometry and Growth Conditions for GaN Halide Vapor Phase Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
S. A. Safvi ◽  
N. R. Perkins ◽  
M. N. Horton ◽  
A. Thon ◽  
D. Zhi ◽  
...  
Keyword(s):  
Numerical Model ◽  
Vapor Phase ◽  
Growth Rates ◽  
Ammonia Concentration ◽  
Growth Conditions ◽  
Vapor Phase Epitaxy ◽  
Operating Conditions ◽  
Crystal Quality ◽  
Group V ◽  
Reactor Geometry

AbstractA numerical model of an experimental gallium nitride horizontal vapor phase epitaxy reactor is presented. The model predicts the flow, concentration profiles, and growth rates. The effects of flowrate variation and geometry on the growth rate, growth uniformity and crystal quality were investigated. Numerical model predictions are compared to experimentally observed values. Parasitic gas phase reactions between group III and group V sources and deposition of material on the wall are shown to lead to reduced overall growth rates and inferior crystal quality. A low ammonia concentration is correlated to deposition of polycrystalline films. An optimum HVPE growth process requires selection of reactor geometry and operating conditions to minimize parasitic reactions and wall deposition while providing a uniform reactant distribution across the substrate.

scholarly journals High growth rate hydride vapor phase epitaxy at low temperature through use of uncracked hydrides

2018 ◽  
Vol 112 (4) ◽  
pp. 042101 ◽  
Author(s):  
Kevin L. Schulte ◽  
Anna Braun ◽  
John Simon ◽  
Aaron J. Ptak
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Vapor Phase ◽  
High Growth ◽  
High Growth Rate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document