scholarly journals Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

2013 ◽  
Vol 113 (14) ◽  
pp. 144506 ◽  
Author(s):  
R. Grassi ◽  
A. Gnudi ◽  
I. Imperiale ◽  
E. Gnani ◽  
S. Reggiani ◽  
...  
Keyword(s):  
Field Effect ◽  
Phonon Scattering ◽  
Field Effect Transistors ◽  
Tight Binding ◽  
Graphene Nanoribbon ◽  
Mode Space ◽  
Space Approach

scholarly journals Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Hojjatollah Sarvari ◽  
Amir Hossein Ghayour ◽  
Zhi Chen ◽  
Rahim Ghayour
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Tight Binding ◽  
Graphene Nanoribbon ◽  
Basis Set ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs) are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs

2011 ◽  
Vol 10 (3) ◽  
pp. 371-378 ◽  
Author(s):  
Roberto Grassi ◽  
Antonio Gnudi ◽  
Elena Gnani ◽  
Susanna Reggiani ◽  
Giorgio Baccarani
Keyword(s):  
Tight Binding ◽  
Graphene Nanoribbon ◽  
Transport Simulation ◽  
Mode Space ◽  
Space Approach

scholarly journals Numerical investigation of the effect of substrate surface roughness on the performance of zigzag graphene nanoribbon field effect transistors symmetrically doped with BN

2014 ◽  
Vol 5 ◽  
pp. 1569-1574 ◽  
Author(s):  
Majid Sanaeepur ◽  
Arash Yazdanpanah Goharrizi ◽  
Mohammad Javad Sharifi
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Substrate Surface ◽  
Tight Binding ◽  
Substrate Material ◽  
Graphene Nanoribbon ◽  
Substrate Roughness ◽  
Current Ratio ◽  
Substrate Surface Roughness ◽  
Graphene Devices

The performance of field effect transistors comprised of a zigzag graphene nanoribbon that is symmetrically doped with boron nitride (BN) as a channel material, is numerically studied for the first time. The device merit for digital applications is investigated in terms of the on-, the off- and the on/off-current ratio. Due to the strong effect of the substrate roughness on the performance of graphene devices, three common substrate materials (SiO2, BN and mica) are examined. Rough surfaces are generated by means of a Gaussian auto-correlation function. Electronic transport simulations are performed in the framework of tight-binding Hamiltonian and non-equilibrium Green's function (NEGF) formalisms. The results show that with an appropriate selection of the substrate material, the proposed devices can meet the on/off-current ratio required for future digital electronics.

New device structures for graphene nanoribbon field effect transistors

2016 ◽  
Vol 6 (3) ◽  
pp. 265-270 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Chong Wu Yi ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
New Device ◽  
Device Structures

Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽  
2015 ◽  
Vol 11 (2) ◽  
pp. 573-577 ◽  
Author(s):  
Mahdiar Ghadiry ◽  
Harith Ahmad ◽  
Alieh Hivechi ◽  
Fatemeh Tavakoli ◽  
Asrulnizam Abd Manaf
Keyword(s):  
Breakdown Voltage ◽  
Edge Effect ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Graphene Nanoribbon ◽  
Generation Rate
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