Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods

Pei Zhao; Jing Guo

doi:10.1063/1.3073875

Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods

Journal of Applied Physics ◽

10.1063/1.3073875 ◽

2009 ◽

Vol 105 (3) ◽

pp. 034503 ◽

Cited By ~ 61

Author(s):

Pei Zhao ◽

Jing Guo

Keyword(s):

Edge Effects ◽

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

Mode Space

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Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering

Journal of Applied Physics ◽

10.1063/1.4800900 ◽

2013 ◽

Vol 113 (14) ◽

pp. 144506 ◽

Cited By ~ 8

Author(s):

R. Grassi ◽

A. Gnudi ◽

I. Imperiale ◽

E. Gnani ◽

S. Reggiani ◽

...

Keyword(s):

Field Effect ◽

Phonon Scattering ◽

Field Effect Transistors ◽

Tight Binding ◽

Graphene Nanoribbon ◽

Mode Space ◽

Space Approach

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Edge Effects on the pH Response of Graphene Nanoribbon Field Effect Transistors

The Journal of Physical Chemistry C ◽

10.1021/jp409116r ◽

2013 ◽

Vol 117 (51) ◽

pp. 27155-27160 ◽

Cited By ~ 36

Author(s):

Xuebin Tan ◽

Hsun-Jen Chuang ◽

Ming-Wei Lin ◽

Zhixian Zhou ◽

Mark Ming-Cheng Cheng

Keyword(s):

Edge Effects ◽

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

Ph Response

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Finite-size and edge effects on the quantum capacitance of graphene nanoribbon field-effect transistors

2014 International Semiconductor Conference (CAS) ◽

10.1109/smicnd.2014.6966391 ◽

2014 ◽

Author(s):

George S. Kliros

Keyword(s):

Edge Effects ◽

Field Effect ◽

Field Effect Transistors ◽

Finite Size ◽

Graphene Nanoribbon ◽

Quantum Capacitance

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Graphene NanoRibbon Field Effect Transistors Analysis and Applications

Superlattices and Microstructures ◽

10.1016/j.spmi.2021.106869 ◽

2021 ◽

pp. 106869

Author(s):

Tahereh Radsar ◽

Hassan Khalesi ◽

Vahid Ghods

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon

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New device structures for graphene nanoribbon field effect transistors

Materials Express ◽

10.1166/mex.2016.1304 ◽

2016 ◽

Vol 6 (3) ◽

pp. 265-270 ◽

Cited By ~ 1

Author(s):

Mahdiar Ghadiry ◽

Harith Ahmad ◽

Chong Wu Yi ◽

Asrulnizam Abd Manaf

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

New Device ◽

Device Structures

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Suspended Graphene Nanoribbon Ion-Sensitive Field-Effect Transistors Formed by Shrink Lithography for pH/Cancer Biomarker Sensing

Journal of Microelectromechanical Systems ◽

10.1109/jmems.2013.2254701 ◽

2013 ◽

Vol 22 (5) ◽

pp. 1140-1146 ◽

Cited By ~ 10

Author(s):

Bo Zhang ◽

Tianhong Cui

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Cancer Biomarker ◽

Graphene Nanoribbon ◽

Suspended Graphene

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Exploiting Edge Effect to Control Generation Rate and Breakdown Voltage in Graphene Nanoribbon Field Effect Transistors

Plasmonics ◽

10.1007/s11468-015-0073-5 ◽

2015 ◽

Vol 11 (2) ◽

pp. 573-577 ◽

Cited By ~ 2

Author(s):

Mahdiar Ghadiry ◽

Harith Ahmad ◽

Alieh Hivechi ◽

Fatemeh Tavakoli ◽

Asrulnizam Abd Manaf

Keyword(s):

Breakdown Voltage ◽

Edge Effect ◽

Field Effect ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

Generation Rate

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Performance metrics of current transport in pristine graphene nanoribbon field-effect transistors using recursive non-equilibrium Green's function approach

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106624 ◽

2020 ◽

Vol 145 ◽

pp. 106624

Author(s):

Kien Liong Wong ◽

Mu Wen Chuan ◽

Afiq Hamzah ◽

Shahrizal Rusli ◽

Nurul Ezaila Alias ◽

...

Keyword(s):

Green's Function ◽

Field Effect ◽

Performance Metrics ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

Function Approach ◽

Pristine Graphene ◽

Current Transport ◽

Non Equilibrium Green’S Function ◽

Non Equilibrium

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An analytical drain current model for graphene nanoribbon tunnel field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab36af ◽

2019 ◽

Vol 58 (9) ◽

pp. 095001

Author(s):

Jiarui Bao ◽

Shuyan Hu ◽

Guangxi Hu ◽

Laigui Hu ◽

Ran Liu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Model ◽

Drain Current ◽

Graphene Nanoribbon

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Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation

Journal of Applied Physics ◽

10.1063/1.4764318 ◽

2012 ◽

Vol 112 (9) ◽

pp. 094505 ◽

Cited By ~ 21

Author(s):

Nima Dehdashti Akhavan ◽

Gregory Jolley ◽

Gilberto A. Umana-Membreno ◽

Jarek Antoszewski ◽

Lorenzo Faraone

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Three Dimensional ◽

Graphene Nanoribbon ◽

Quantum Mechanical ◽

Mechanical Simulation

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