Characterization of density-of-states and parasitic resistance in a-InGaZnO thin-film transistors after negative bias stress

2013 ◽  
Vol 102 (14) ◽  
pp. 143502 ◽  
Author(s):  
Chunhyung Jo ◽  
Sungwoo Jun ◽  
Woojoon Kim ◽  
Inseok Hur ◽  
Hagyoul Bae ◽  
...  
Keyword(s):  
Thin Film ◽  
Density Of States ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Parasitic Resistance

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 ◽  
Vol 111 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

Stability of zinc nitride thin-film transistors under positive and negative bias stress

2020 ◽  
Vol 171 ◽  
pp. 107841
Author(s):  
Miguel A. Dominguez ◽  
Jose Luis Pau ◽  
Andrés Redondo-Cubero
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Zinc Nitride

Abnormal Negative Bias Stress Instability of Amorphous InGaZnO Thin Film Transistors

2020 ◽  
Vol MA2020-02 (28) ◽  
pp. 1918-1918
Author(s):  
Chia-Chun Yen ◽  
Chieh Lo ◽  
Yu-Chieh Liu ◽  
Chun-Hung Yeh ◽  
Cheewee Liu
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress ◽  
Amorphous Ingazno

Investigation of a Hump Phenomenon in Back-Channel-Etched Amorphous In-Ga-Zn-O Thin-Film Transistors Under Negative Bias Stress

2017 ◽  
Vol 38 (5) ◽  
pp. 592-595 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Bo-Wei Chen ◽  
Hui-Chun Huang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

scholarly journals Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Membranes ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 29
Author(s):  
Honglong Ning ◽  
Xuan Zeng ◽  
Hongke Zhang ◽  
Xu Zhang ◽  
Rihui Yao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Room Temperature ◽  
Good Stability ◽  
Negative Bias ◽  
Bending Stress ◽  
Excellent Performance ◽  
Flexible Display ◽  
Bias Stress ◽  
Device Applications

Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

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