Electrodeposition and characterization of magnetostrictive galfenol (FeGa) thin films for use in microelectromechanical systems

2013 ◽  
Vol 113 (17) ◽  
pp. 17A937 ◽  
Author(s):  
Eliot C. Estrine ◽  
William P. Robbins ◽  
Mazin M. Maqableh ◽  
Bethanie J. H. Stadler
Keyword(s):  
Thin Films ◽  
Microelectromechanical Systems ◽  
Magnetostrictive Galfenol

scholarly journals AFM Nanotribomechanical Characterization of Thin Films for MEMS Applications

Micromachines ◽  
2021 ◽  
Vol 13 (1) ◽  
pp. 23
Author(s):  
Corina Bîrleanu ◽  
Marius Pustan ◽  
Florina Șerdean ◽  
Violeta Merie
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Microelectromechanical Systems ◽  
Mems Devices ◽  
Force Microscopy ◽  
Atomic Force ◽  
Fundamental Understanding ◽  
Quantitative Analyses ◽  
Efficiency And Reliability

Nanotribological studies of thin films are needed to develop a fundamental understanding of the phenomena that occur to the interface surfaces that come in contact at the micro and nanoscale and to study the interfacial phenomena that occur in microelectromechanical systems (MEMS/NEMS) and other applications. Atomic force microscopy (AFM) has been shown to be an instrument capable of investigating the nanomechanical behavior of many surfaces, including thin films. The measurements of tribo-mechanical behavior for MEMS materials are essential when it comes to designing and evaluating MEMS devices. A great deal of research has been conducted to evaluate the efficiency and reliability of different measurements methods for mechanical properties of MEMS material; nevertheless, the technologies regarding manufacturing and testing MEMS materials are not fully developed. The objectivesof this study are to focus on the review of the mechanical and tribological advantages of thin film and to highlight the experimental results of some thin films to obtain quantitative analyses, the elastic/plastic response and the nanotribological behavior. The slight fluctuation of the results for common thin-film materials is most likely due to the lack of international standardization for MEMS materials and for the methods used to measure their properties.

Electron microscopic characterization of diamond thin films and substrates for diamond heteroepitaxial growth

1989 ◽  
Vol 47 ◽  
pp. 592-593
Author(s):  
J.B. Posthill ◽  
R.P. Burns ◽  
R.A. Rudder ◽  
Y.H. Lee ◽  
R.J. Markunas ◽  
...  
Keyword(s):  
Thin Films ◽  
Wide Band ◽  
Deposition Process ◽  
Heteroepitaxial Growth ◽  
Electron Microscopic ◽  
Wide Band Gap ◽  
Lattice Matching ◽  
Different Types ◽  
Diamond Thin Films

Because of diamond’s wide band gap, high thermal conductivity, high breakdown voltage and high radiation resistance, there is a growing interest in developing diamond-based devices for several new and demanding electronic applications. In developing this technology, there are several new challenges to be overcome. Much of our effort has been directed at developing a diamond deposition process that will permit controlled, epitaxial growth. Also, because of cost and size considerations, it is mandatory that a non-native substrate be developed for heteroepitaxial nucleation and growth of diamond thin films. To this end, we are currently investigating the use of Ni single crystals on which different types of epitaxial metals are grown by molecular beam epitaxy (MBE) for lattice matching to diamond as well as surface chemistry modification. This contribution reports briefly on our microscopic observations that are integral to these endeavors.

Deposition and Characterization of Al2O3 and BiFeO3 Thin Films on Titanium Substrates for Tough MEMS Devices

2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Mems Devices ◽  
Titanium Substrates

Charge Trapping and Degradation Properties of PZT Thin Films for MEMS

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell
Keyword(s):  
Thin Films ◽  
Loss Factor ◽  
High Field ◽  
Microelectromechanical Systems ◽  
Charge Trapping ◽  
Metal Organic ◽  
Electrical Reliability ◽  
Silicon Based ◽  
Degradation Properties ◽  
Organic Decomposition

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).

Vapor Deposition Polymerization and Electrical Characterization of TPD Thin Films

2011 ◽  
Vol E94-C (2) ◽  
pp. 157-163 ◽  
Author(s):  
Masakazu MUROYAMA ◽  
Ayako TAJIRI ◽  
Kyoko ICHIDA ◽  
Seiji YOKOKURA ◽  
Kuniaki TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Deposition ◽  
Electrical Characterization

Preparation and Characterization of Polymer Blend (PVA/PEO) Filled with Methyl Orange Thin Films

2018 ◽  
Vol 14 (2) ◽  
pp. 221-234
Author(s):  
Ahmed Namah Mohamed ◽  
◽  
Jafer Fahdel Odah ◽  
Haider Tawfiq Naeem
Keyword(s):  
Thin Films ◽  
Methyl Orange ◽  
Polymer Blend
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