Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

2013 ◽  
Vol 102 (13) ◽  
pp. 133503 ◽  
Author(s):  
Kai-Huang Chen ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Activation Energy ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Memory Devices ◽  
Access Memory ◽  
Energy Characteristics ◽  
Resistance Random Access Memory

scholarly journals Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

2013 ◽  
Vol 34 (5) ◽  
pp. 677-679 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

2015 ◽  
Vol 32 (2) ◽  
pp. 028502 ◽  
Author(s):  
Hong-Tao Liu ◽  
Bao-He Yang ◽  
Hang-Bing Lv ◽  
Xiao-Xin Xu ◽  
Qing Luo ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory

Nonvolatile transparent manganese oxide thin film resistance random access memory devices

2014 ◽  
Vol 53 (8S3) ◽  
pp. 08NL03 ◽  
Author(s):  
Kai-Huang Chen ◽  
Jen-Wei Huang ◽  
Chien-Min Cheng ◽  
Jian-Yang Lin ◽  
Tzung-Shiun Wu
Keyword(s):  
Thin Film ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Thin Film ◽  
Memory Devices ◽  
Film Resistance ◽  
Access Memory ◽  
Resistance Random Access Memory
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