Hopping conduction distance of bipolar switching GdOx resistance random access memory thin films devices modified by different constant compliance current

2018 ◽  
Vol 91 ◽  
pp. 330-334 ◽  
Author(s):  
Kai-Huang Chen ◽  
Chien-Min Cheng ◽  
Cheng-Ying Li ◽  
Shou-Jen Huang
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Access Memory ◽  
Bipolar Switching ◽  
Resistance Random Access Memory

Bipolar Switching Properties of the Manganese Oxide Thin Film RRAM Devices

2014 ◽  
Vol 602-603 ◽  
pp. 1056-1059 ◽  
Author(s):  
Min Chang Kuan ◽  
Fann Wei Yang ◽  
Chien Min Cheng ◽  
Kai Huang Chen ◽  
Jian Tz Lee
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Manganese Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Non Volatile Memory ◽  
Volatile Memory

Up to now, the various non-volatile memory devices such as, ferroelectric random access memory (FeRAM), magnetron random access memory (MRAM), and resistance random access memory (RRAM) were widely discussed and investigated. For these nonvolatile memory devices, the resistance random access memory (RRAM) devices will play an important role because of its non-destructive readout, low operation voltage, high operation speed, long retention time, and simple structure. The resistance random access memory (RRAM) devices were only consisting of one resistor and one corresponding transistor. The subject of this work was to study the characteristics of manganese oxide (MnO) thin films deposited on transparent conductive thin film using the rf magnetron sputtering method. The optimal sputtering conditions of as-deposited manganese oxide (MnO) thin films were the rf power of 80 W, chamber pressure of 20 mTorr, substrate temperature of 580°C, and an oxygen concentration of 40%. The basic mechanisms for the bistable resistance switching were observed. In which, the non-volatile memory and switching properties of the manganese oxide (MnO) thin film structures were reported and the relationship between the memory windows and electrical properties was investigated.

scholarly journals Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

2013 ◽  
Vol 34 (5) ◽  
pp. 677-679 ◽  
Author(s):  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Memory Devices ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Doped Silicon

Effects of final annealing in oxygen on characteristics of BaTiO3 thin films for resistance random access memory

2015 ◽  
Vol 54 (10S) ◽  
pp. 10NA12 ◽  
Author(s):  
Shuhei Hashimoto ◽  
Toshiyuki Sugie ◽  
Ziyang Zhang ◽  
Kaoru Yamashita ◽  
Minoru Noda
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Final Annealing ◽  
Resistance Random Access Memory

Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices

2013 ◽  
Vol 102 (13) ◽  
pp. 133503 ◽  
Author(s):  
Kai-Huang Chen ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
...  
Keyword(s):  
Activation Energy ◽  
Random Access ◽  
Random Access Memory ◽  
Hopping Conduction ◽  
Memory Devices ◽  
Access Memory ◽  
Energy Characteristics ◽  
Resistance Random Access Memory

Hydrothermal synthesis of heteroepitaxial Pb(ZrxTi1−x)O3 thin films at 90–150 °C

1997 ◽  
Vol 12 (5) ◽  
pp. 1176-1178 ◽  
Author(s):  
A. T. Chien ◽  
J. S. Speck ◽  
F. F. Lange
Keyword(s):  
Thin Films ◽  
Low Temperatures ◽  
High Dielectric Constant ◽  
Ambient Pressure ◽  
Random Access ◽  
Random Access Memory ◽  
Molar Ratio ◽  
Access Memory ◽  
Eds Analysis ◽  
High Dielectric

Pb(ZrxTi1−x)O3 and PbZrO3 heteroepitaxial thin films were produced in an aqueous solution (10 M KOH) at ambient pressure and low temperatures (90–150 °C) on (001) SrTiO3 and LaAlO3 single crystal substrates. Growth of the Pb(ZrxTi1−x)O3 and PbZrO3 thin films initiates by the formation of {100} faceted islands. Energy dispersive spectroscopy (EDS) analysis of the Pb(ZrxTi1−x)O3 thin film shows that the Zr: Ti ratio is 45: 56, nearly identical to the molar ratio of the precursors. This route might provide a viable low temperature alternative for the formation of high dielectric constant thin films for applications such as dynamic random access memory (DRAM).

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