Neutron irradiation effects on domain wall mobility and reversibility in lead zirconate titanate thin films

2013 ◽  
Vol 113 (12) ◽  
pp. 124104 ◽  
Author(s):  
Joseph T. Graham ◽  
Geoff L. Brennecka ◽  
Paulo Ferreira ◽  
Leo Small ◽  
David Duquette ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Neutron Irradiation ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Irradiation Effects ◽  
Zirconate Titanate ◽  
Domain Wall Mobility ◽  
Wall Mobility

scholarly journals In situ measurement of increased ferroelectric/ferroelastic domain wall motion in declamped tetragonal lead zirconate titanate thin films

2015 ◽  
Vol 117 (5) ◽  
pp. 054103 ◽  
Author(s):  
M. Wallace ◽  
R. L. Johnson-Wilke ◽  
G. Esteves ◽  
C. M. Fancher ◽  
R. H. T. Wilke ◽  
...  
Keyword(s):  
Thin Films ◽  
Domain Wall ◽  
Lead Zirconate Titanate ◽  
Wall Motion ◽  
Domain Wall Motion ◽  
Lead Zirconate ◽  
In Situ Measurement ◽  
Zirconate Titanate

The Effects of Film Thickness and Texture on the high and Low-Field stress Response of Lead Zirconate Titanate Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
J. F. Shepard ◽  
F. Chu ◽  
B. Xu ◽  
S. Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Stress Response ◽  
Domain Wall ◽  
Film Thickness ◽  
Lead Zirconate Titanate ◽  
Lead Zirconate ◽  
Biaxial Stress ◽  
Field Stress ◽  
Low Field ◽  
Zirconate Titanate

ABSTRACTLead zirconate titanate (PZT) thin films are currently employed in non-volatile ferroelectric memories (FRAM's) and are intended to be used as the active material in a number of microelectromechanical systems (MEMS). Several groups have reported that both the piezoelectric and dielectric characteristics of ferroelectric thin films improve with an increase of film thickness, though the reasons for those improvements are unclear. Previous investigations on the effects of biaxial mechanical stress indicate that non-180° domain wall motion is limited in PZT 52/48 films less than 0.5 μm thick. It is possible that some of the improvements of the dielectric and piezoelectric characteristics reported for thicker films (i.e. films thicker than 0.5 μm) are associated with an increase of extrinsic contributions to the properties. To evaluate domain wall mobility in thicker films, the high and low-field stress response of sol-gel PZT fabricated with either rapid thermal processing or conventional furnace annealing were investigated. Films with thicknesses ranging from 0.6 to 5.0 μm thick were measured as a function of applied biaxial stress (±110 MPa). It was found that for all films tested the changes of capacitance were on the order of 2–3%. High-field measurements showed: (1) the coercive field to be insensitive to applied stress, (2) remanent polarizations to decrease about 20% at the maximum applied tension, (3) remanent polarizations to increase less than 10% with applied compression, and (4) all changes to be reversible over the stress range investigated. These results suggest that extrinsic contributions are limited for the films tested.

Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations

2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  
Keyword(s):  
Thin Films ◽  
Rare Earth ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Property ◽  
Ferroelectric Properties ◽  
Lead Zirconate ◽  
Crystal Anisotropy ◽  
Pzt Film ◽  
Zirconate Titanate ◽  
Ion Substitution

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.

Early Stages of Crystallization of Sol−Gel-Derived Lead Zirconate Titanate Thin Films

2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Early Stages ◽  
Zirconate Titanate

scholarly journals Interfacial mechanisms controlling phase formation in sol-gel derived lead zirconate titanate thin films

1994 ◽  
Vol 17 (6) ◽  
pp. 1005-1014 ◽  
Author(s):  
S B Majumder ◽  
V N Kulkarni ◽  
Y N Mohapatra ◽  
D C Agrawal
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate
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