Electrical resistivity of HTSC–normal metal interface

2013 ◽  
Vol 39 (2) ◽  
pp. 98-101 ◽  
Author(s):  
V. I. Sokolenko ◽  
V. A. Frolov
Keyword(s):  
Electrical Resistivity ◽  
Normal Metal ◽  
Metal Interface

Study of a superconductor—normal-metal interface in a finite geometry

1978 ◽  
Vol 18 (7) ◽  
pp. 3174-3184 ◽  
Author(s):  
Ora Entin-Wohlman ◽  
J. Bar-Sagi
Keyword(s):  
Finite Geometry ◽  
Normal Metal ◽  
Metal Interface

Disentanglement of bulk and interfacial spin Hall effect in ferromagnet/normal metal interface

2016 ◽  
Vol 94 (14) ◽  
Author(s):  
X. Zhou ◽  
M. Tang ◽  
X. L. Fan ◽  
X. P. Qiu ◽  
S. M. Zhou
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Normal Metal ◽  
Metal Interface

The oxidation of Inconel alloy MA754 at low oxidation potential

1983 ◽  
Vol 41 ◽  
pp. 218-219
Author(s):  
D. N. Braski ◽  
P. D. Goodell ◽  
J. V. Cathcart ◽  
R. H. Kane
Keyword(s):  
Surface Layer ◽  
Oxidation Potential ◽  
Metal Interface ◽  
Elevated Temperature Strength ◽  
Surface Conditions ◽  
Inconel Alloy ◽  
Inco Alloy ◽  
Resistance To Oxidation ◽  
Oxide Particles ◽  
Cold Worked

It has been known for some time that the addition of small oxide particles to an 80 Ni—20 Cr alloy not only increases its elevated-temperature strength, but also markedly improves its resistance to oxidation. The mechanism by which the oxide dispersoid enhances the oxidation resistance is being studied collaboratively by ORNL and INCO Alloy Products Company.Initial experiments were performed using INCONEL alloy MA754, which is nominally: 78 Ni, 20 Cr, 0.05 C, 0.3 Al, 0.5 Ti, 1.0 Fe, and 0.6 Y2O3 (wt %).Small disks (3 mm diam × 0.38 mm thick) were cut from MA754 plate stock and prepared with two different surface conditions. The first was prepared by mechanically polishing one side of a disk through 0.5 μm diamond on a syntron polisher while the second used an additional sulfuric acid-methanol electropolishing treatment to remove the cold-worked surface layer. Disks having both surface treatments were oxidized in a radiantly heated furnace for 30 s at 1000°C. Three different environments were investigated: hydrogen with nominal dew points of 0°C, —25°C, and —55°C. The oxide particles and films were examined in TEM by using extraction replicas (carbon) and by backpolishing to the oxide/metal interface. The particles were analyzed by EDS and SAD.

In-situ electrical-resistivity measurements in the high-voltage electron microscope

1978 ◽  
Vol 36 (1) ◽  
pp. 68-69
Author(s):  
W. E. King
Keyword(s):  
Electrical Resistivity ◽  
Electron Microscope ◽  
High Voltage ◽  
Resistivity Measurements ◽  
Voltage Electron ◽  
High Voltage Electron Microscope ◽  
High Voltage Electron ◽  
Wide Range ◽  
Helium Gas

A side-entry type, helium-temperature specimen stage that has the capability of in-situ electrical-resistivity measurements has been designed and developed for use in the AEI-EM7 1200-kV electron microscope at Argonne National Laboratory. The electrical-resistivity measurements complement the high-voltage electron microscope (HVEM) to yield a unique opportunity to investigate defect production in metals by electron irradiation over a wide range of defect concentrations.A flow cryostat that uses helium gas as a coolant is employed to attain and maintain any specified temperature between 10 and 300 K. The helium gas coolant eliminates the vibrations that arise from boiling liquid helium and the temperature instabilities due to alternating heat-transfer mechanisms in the two-phase temperature regime (4.215 K). Figure 1 shows a schematic view of the liquid/gaseous helium transfer system. A liquid-gas mixture can be used for fast cooldown. The cold tip of the transfer tube is inserted coincident with the tilt axis of the specimen stage, and the end of the coolant flow tube is positioned without contact within the heat exchanger of the copper specimen block (Fig. 2).

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