scholarly journals Effects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors

2013 ◽  
Vol 113 (8) ◽  
pp. 084501 ◽  
Author(s):  
L. C. Yang ◽  
R. X. Wang ◽  
S. J. Xu ◽  
Z. Xing ◽  
Y. M. Fan ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Zno Film ◽  
Metal Semiconductor Metal ◽  
Doped Zno ◽  
Ultraviolet Photodetectors

scholarly journals Hydrothermal Growth of Quasi-Monocrystal ZnO Thin Films and Their Application in Ultraviolet Photodetectors

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Yung-Chun Tu ◽  
Shui-Jinn Wang ◽  
Tseng-Hsing Lin ◽  
Chien-Hsiung Hung ◽  
Tsung-Che Tsai ◽  
...  
Keyword(s):  
Annealing Temperature ◽  
Uv Light ◽  
Hydrothermal Growth ◽  
Photoluminescence Spectra ◽  
Zno Film ◽  
Sputtering Deposition ◽  
Photoelectric Properties ◽  
Growth Method ◽  
P Type ◽  
Ultraviolet Photodetectors

Quasi-monocrystal ZnO film grown using the hydrothermal growth method is used for the fabrication of Cu2O/ZnO heterojunction (HJ) ultraviolet photodetectors (UV-PDs). The HJ was formed via the sputtering deposition of p-type Cu2O onto hydrothermally grown ZnO film (HTG-ZnO-film). The effect of annealing temperature in the nitrogen ambient on the photoluminescence spectra of the synthesized ZnO film was studied. The optoelectronic properties of Cu2O/ZnO film with various Cu2O thicknesses (250–750 nm) under UV light (365 nm; intensity: 3 mW/cm2) were determined. The UV sensitivity of the HTG-ZnO-film-based UV-PDs and the sputtered ZnO-film-based UV-PDs were 55.6-fold (SHTG) and 8.8-fold (Ssputter), respectively. The significant gain in sensitivity (SHTG/Ssputter= 630%) of the proposed ZnO-film-based device compared to that for the device based on sputtered film can be attributed to the improved photoelectric properties of quasi-monocrystal ZnO film.

Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

RSC Advances ◽  
2015 ◽  
Vol 5 (104) ◽  
pp. 85523-85529 ◽  
Author(s):  
Pankaj Sharma ◽  
Rohit Singh ◽  
Vishnu Awasthi ◽  
Sushil K. Pandey ◽  
Vivek Garg ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Room Temperature ◽  
Metal Structure ◽  
Zero Bias ◽  
Uv Photodetector ◽  
Metal Semiconductor Metal ◽  
Doped Zno ◽  
Ultraviolet Photodetectors

Ga-doped ZnO based ultraviolet photodetectors (PDs) were fabricated with a metal–semiconductor–metal structure. The room-temperature operable PDs had 58 mA W−1 responsivity at zero bias with internal and external quantum efficiency values of ∼22.5 and 37.4%.

Elaboration and Characterization of Mg-Doped ZnO Thin Films by Thermal Evaporation: Annealing Temperature Effect

2021 ◽  
Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Effect ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Zno Thin Films ◽  
Doped Zno ◽  
Mg Doped

Effect of Er local surrounding on photoluminescence of Si Er co-doped ZnO film

2018 ◽  
Vol 200 ◽  
pp. 9-13 ◽  
Author(s):  
Kaikai Li ◽  
Fei Lu ◽  
Ranran Fan ◽  
Changdong Ma ◽  
Bo Xu
Keyword(s):  
Zno Film ◽  
Doped Zno ◽  
Co Doped ◽  
Local Surrounding

Design and simulation of a photocatalysis reactor for rhodamine B degradation using cobalt-doped ZnO film

2021 ◽  
Author(s):  
Karim Tanji ◽  
Morad Zouheir ◽  
Mouad Hachhach ◽  
Hassan Ahmoum ◽  
Ilyass Jellal ◽  
...  
Keyword(s):  
Rhodamine B ◽  
Zno Film ◽  
Doped Zno

Transparent and crystalline Al-doped ZnO film-embedded heterojunction Si solar cell

2012 ◽  
Vol 75 ◽  
pp. 99-101 ◽  
Author(s):  
Joondong Kim ◽  
Ju-Hyung Yun ◽  
Yun Chang Park ◽  
Wayne A. Anderson
Keyword(s):  
Solar Cell ◽  
Zno Film ◽  
Si Solar Cell ◽  
Doped Zno
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