Crystalline SrBi[sub 4]Ti[sub 4]O[sub 15] thin films on amorphous substrates sputtered by rf sputtering

2013 ◽  
Author(s):  
A. Rambabu ◽  
K. C. James Raju
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Amorphous Substrates

Preparation of highly oriented polycrystalline AlN thin films deposited on glass at oblique-angle incidence

1997 ◽  
Vol 12 (7) ◽  
pp. 1689-1692 ◽  
Author(s):  
A. Rodríguez-Navarro ◽  
W. Otañno-Rivera ◽  
J. M. García-Ruiz ◽  
R. Messier ◽  
L. J. Pilione
Keyword(s):  
Thin Films ◽  
Normal Population ◽  
Rf Sputtering ◽  
Normal Incidence ◽  
Angle Of Incidence ◽  
X Ray ◽  
Glancing Angle ◽  
Amorphous Substrates ◽  
Oriented Polycrystalline ◽  
Sputtering System

A new method to prepare polycrystalline AlN thin films biaxially oriented on amorphous substrates has been demonstrated. The films were deposited at different angles of incidence with a rf sputtering system. Population-1 crystallites, oriented with their c-axis pointing toward the incoming flux with random orientation in aximuthal directions, predominate at low angle of incidence (near normal). Population-2 crystallites result from non-normal incidence and have their c-axis tilted away from the incoming flux and predominate at high, near glancing, angle of incidence. The alignment of crystallites (population-2) increases with angle of incidence. Crystallites align along the [11*0] channeling direction, characterized by a low sputtering yield, while misoriented crystal grains suffer a higher resputtering and their growth is inhibited. For films deposited at 75°, the FWHM of an x-ray ϕ scan profile is 25°, indicating a high in-plane alignment.

Narrow optical gap ferroelectric Bi2ZnTiO6 thin films deposited by RF sputtering

2019 ◽  
Vol 7 (17) ◽  
pp. 10696-10701 ◽  
Author(s):  
Fábio G. Figueiras ◽  
J. Ramiro A. Fernandes ◽  
J. P. B. Silva ◽  
Denis O. Alikin ◽  
Eugénia C. Queirós ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Optical Gap ◽  
Ferroelectric Oxide

Thriving ferroelectric oxide Bi2ZnTiO6 thin films with a 1.48 eV optical gap.

scholarly journals High quality ITO thin films grown by dc and RF sputtering without oxygen

2010 ◽  
Vol 43 (5) ◽  
pp. 055402 ◽  
Author(s):  
Ocal Tuna ◽  
Yusuf Selamet ◽  
Gulnur Aygun ◽  
Lutfi Ozyuzer
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
High Quality ◽  
Ito Thin Films

Characteristics of CIGS thin films prepared by RF sputtering employing CIGS single target

2011 ◽  
Author(s):  
Tae-Won Kim ◽  
Young-Baek Kim ◽  
Sang-In Song ◽  
Chae-Whan Jung ◽  
Jong-Ho Lee
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Single Target

Characterization of Cu(InxGa1−x)2Se3.5 thin films prepared by rf sputtering

1998 ◽  
Vol 50 (1-4) ◽  
pp. 13-18 ◽  
Author(s):  
Tooru Tanaka ◽  
Nobutaka Tanahashi ◽  
Toshiyuki Yamaguchi ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Rf Sputtering

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Structural characterization of V2O5–TiO2 thin films deposited by RF sputtering from a titanium target with vanadium insets

2005 ◽  
Vol 109 (1) ◽  
pp. 47-51 ◽  
Author(s):  
I. Alessandri ◽  
E. Comini ◽  
E. Bontempi ◽  
G. Sberveglieri ◽  
L.E. Depero
Keyword(s):  
Thin Films ◽  
Structural Characterization ◽  
Rf Sputtering ◽  
Tio2 Thin Films ◽  
Titanium Target

Lead Iodide Thin Films via rf Sputtering

2020 ◽  
Vol 20 (3) ◽  
pp. 1531-1537 ◽  
Author(s):  
José Maria Clemente da Silva Filho ◽  
Nelson Fabián Villegas Borrero ◽  
Gustavo Alexandre Viana ◽  
Rafael Borges Merlo ◽  
Francisco Chagas Marques
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Lead Iodide
Sign in / Sign up

Export Citation Format

Share Document