Hydrogen implantation-induced layer transfer of silicon using direct wafer bonding

2013 ◽  
Author(s):  
U. Dadwal ◽  
S. Chandra ◽  
P. Kumar ◽  
D. Kanjilal ◽  
R. Singh
Keyword(s):  
Wafer Bonding ◽  
Layer Transfer ◽  
Direct Wafer Bonding ◽  
Hydrogen Implantation

Wafer Bonding Involving Complex Oxides

1999 ◽  
Vol 574 ◽  
Author(s):  
M. Alexe ◽  
P. Kopperschmidt ◽  
U. Gösele ◽  
Qin-Yi Tong ◽  
Li-Juan Huang
Keyword(s):  
Single Crystal ◽  
Wafer Bonding ◽  
Complex Oxides ◽  
Structural Quality ◽  
Layer Transfer ◽  
Simple Method ◽  
High K ◽  
Direct Wafer Bonding ◽  
Crystal Films ◽  
Hydrogen Implantation

AbstractThe present paper proposes a simple method which may be able to provide true single-crystal films of complex oxides on large substrates including semiconductors like silicon or gallium arsenide. The method describes a layer transfer process using layer splitting by hydrogen implantation and direct wafer bonding (DWB) to obtain single-crystal oxide films on different substrates. Alternatively, a fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding and layer transfer is also described. This process is an alternative method to the direct deposition of oxides films (ferroelectric, high-k) on silicon and allows fabrication of metal oxide-silicon heterostructures with an interface having a good structural quality as well as a low trap density.

Weakening of Hardness and Modulus of the Si Lattice by Hydrogen Implantation for Layer Transfer in Wafer Bonding Technology

2019 ◽  
Vol 16 (8) ◽  
pp. 385-391
Author(s):  
Diefeng Gu ◽  
H. Baumgart ◽  
Konstantin Bourdelle ◽  
George K. Celler ◽  
Abdelmageed Elmustafa
Keyword(s):  
Wafer Bonding ◽  
Layer Transfer ◽  
Hydrogen Implantation ◽  
Bonding Technology

Direct Wafer Bonding and Layer Transfer: An Innovative way for the Integration of Ferroelectric Oxides into Silicon Technology

1997 ◽  
Vol 493 ◽  
Author(s):  
M. Alexe ◽  
St. Senz ◽  
A. Pignolet ◽  
J. F. Scott ◽  
D. Hesse ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Semiconductor Heterostructures ◽  
Chemical Solution ◽  
Layer Transfer ◽  
Charge Voltage ◽  
Solution Deposition ◽  
Single Body ◽  
Direct Wafer Bonding ◽  
Capacitance Voltage ◽  
Ferroelectric Oxides

ABSTRACTAn innovative fabrication process of ferroelectric-semiconductor heterostructures based on direct wafer bonding has been demonstrated. Ferroelectric thin films of Bi4Ti3O12 (BiT) and Pb(Zr,Ti)O3 (PZT) were deposited on 3” Si wafers using chemical solution deposition (CSD) and subsequently crystallized by conventional and rapid thermal annealing. The films were then polished in order to reach a roughness and waviness suitable for bonding. They were then directly bonded to silicon wafers in a micro-cleanroom and annealed in air at temperatures ranging from 200°C to 500°C. Bonding energies up to 1.5 J/m2 have been achieved which is almost high enough to consider the two bonded wafers as a single body. Metal-Ferroelectric-Silicon (MFS) structures containing the ferroelectric-Si bonded interface were accomplished by polishing down and etching the handling wafer. The MFS structures were electrically characterized by capacitance-voltage (C-V) and charge-voltage (Q-V) measurements.

Direct wafer bonding and layer transfer for ferroelectric thin film integration

1999 ◽  
Vol 27 (1-4) ◽  
pp. 205-211 ◽  
Author(s):  
M. Alexe ◽  
St. Senz ◽  
A. Pignolet ◽  
D. Hesse ◽  
U. Gösele
Keyword(s):  
Thin Film ◽  
Wafer Bonding ◽  
Ferroelectric Thin Film ◽  
Layer Transfer ◽  
Direct Wafer Bonding

Low temperature InP layer transfer onto Si by helium implantation and direct wafer bonding

2006 ◽  
Vol 21 (9) ◽  
pp. 1311-1314 ◽  
Author(s):  
R Singh ◽  
I Radu ◽  
R Scholz ◽  
C Himcinschi ◽  
U Gösele ◽  
...  
Keyword(s):  
Low Temperature ◽  
Wafer Bonding ◽  
Layer Transfer ◽  
Direct Wafer Bonding ◽  
Helium Implantation

High Quality Thin Body III-V-On-Insulator Channel Layer Transfer on Si Wafer Using Direct Wafer Bonding

2019 ◽  
Vol 33 (4) ◽  
pp. 391-401 ◽  
Author(s):  
Masafumi Yokoyama ◽  
Tetsuji Yasuda ◽  
Hideki Takagi ◽  
Hisashi Yamada ◽  
Yuji Urabe ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Thin Body ◽  
Layer Transfer ◽  
High Quality ◽  
Channel Layer ◽  
Direct Wafer Bonding ◽  
Si Wafer
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