Elucidation of ambient gas effects in organic nano-floating-gate nonvolatile memory

2013 ◽  
Vol 102 (5) ◽  
pp. 053303 ◽  
Author(s):  
Xiao-Jian She ◽  
Chang-Hai Liu ◽  
Jing-Yu Zhang ◽  
Xu Gao ◽  
Sui-Dong Wang
Keyword(s):  
Nonvolatile Memory ◽  
Floating Gate ◽  
Ambient Gas

Intrinsic Mismatch Between Floating-Gate Nonvolatile Memory Cell and Equivalent Transistor

2007 ◽  
Vol 28 (5) ◽  
pp. 440-442 ◽  
Author(s):  
Russell Duane ◽  
Quentin Rafhay ◽  
M. Florian Beug ◽  
Michiel van Duuren
Keyword(s):  
Nonvolatile Memory ◽  
Memory Cell ◽  
Floating Gate

Fabrication and Electrical Characterization of Metal-Silicide Nanocrystals for Nano Floating Gate Nonvolatile Memory

2009 ◽  
Vol 1160 ◽  
Author(s):  
Seung Jong Han ◽  
Ki Bong Seo ◽  
Dong Uk Lee ◽  
Eun Kyu Kim ◽  
Se-Mam Oh ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Electrical Characterization ◽  
Spherical Shape ◽  
Average Diameter ◽  
Floating Gate ◽  
Flat Band ◽  
Hysteresis Curve ◽  
Flat Band Voltage ◽  
Transmission Electron ◽  
Floating Gate Memory

AbstractWe have fabricated the nano-floating gate memory with the TiSi2 and WSi2 nanocrystals embedded in the dielectrics. The TiSi2 and WSi2 nanocrystals were created by using sputtering and rapidly thermal annealing system, and then their morphologies were investigated by transmission electron microscopy. These nanocrystals have a spherical shape with an average diameter of 2-5 nm. The electrical properties of the nano-floating gate memory with TiSi2 and WSi2 nanocrystals were characterized by capacitance-voltage (C-V) hysteresis curve, memory speed and retention. The flat-band voltage shifts of the TiSi2 and WSi2 nanocrystals capacitors obtained appeared up to 4.23 V and 4.37 V, respectively. Their flat-band voltage shifts were maintained up to 1.6 V and 1 V after 1 hr.

Nonvolatile memory with Co–SiO2 core-shell nanocrystals as charge storage nodes in floating gate

2009 ◽  
Vol 95 (20) ◽  
pp. 203112 ◽  
Author(s):  
Hai Liu ◽  
Domingo A. Ferrer ◽  
Fahmida Ferdousi ◽  
Sanjay K. Banerjee
Keyword(s):  
Nonvolatile Memory ◽  
Floating Gate ◽  
Charge Storage ◽  
Core Shell

CARBON NANOTUBE BASED NONVOLATILE MEMORY DEVICES

2006 ◽  
Vol 16 (04) ◽  
pp. 959-975 ◽  
Author(s):  
YUEGANG ZHANG
Keyword(s):  
Carbon Nanotube ◽  
Flash Memory ◽  
Nonvolatile Memory ◽  
Memory Performance ◽  
Memory Device ◽  
Floating Gate ◽  
Memory Devices ◽  
Memory Cells ◽  
Nonvolatile Memory Devices ◽  
Electrostatic Coupling

The technology progress and increasing high density demand have driven the nonvolatile memory devices into nanometer scale region. There is an urgent need of new materials to address the high programming voltage and current leakage problems in the current flash memory devices. As one of the most important nanomaterials with excellent mechanical and electronic properties, carbon nanotube has been explored for various nonvolatile memory applications. While earlier proposals of "bucky shuttle" memories and nanoelectromechanical memories remain as concepts due to fabrication difficulty, recent studies have experimentally demonstrated various prototypes of nonvolatile memory cells based on nanotube field-effect-transistor and discrete charge storage bits, which include nano-floating gate memory cells using metal nanocrystals, oxide-nitride-oxide memory stack, and more simpler trap-in-oxide memory devices. Despite of the very limited research results, distinct advantages of high charging efficiency at low operation voltage has been demonstrated. Single-electron charging effect has been observed in the nanotube memory device with quantum dot floating gates. The good memory performance even with primitive memory cells is attributed to the excellent electrostatic coupling of the unique one-dimensional nanotube channel with the floating gate and the control gate, which gives extraordinary charge sensibility and high current injection efficiency. Further improvement is expected on the retention time at room temperature and programming speed if the most advanced fabrication technology were used to make the nanotube based memory cells.

scholarly journals Characteristics of Si Floating Gate Nonvolatile Memory Based on Schottky Barrier Tunneling Transistor

2009 ◽  
Vol 18 (4) ◽  
pp. 302-309 ◽  
Author(s):  
Dae-Ho Son ◽  
Eun-Kyeom Kim ◽  
Jeong-Ho Kim ◽  
Kyung-Su Lee ◽  
Tae-Kyung Yim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Nonvolatile Memory ◽  
Floating Gate ◽  
Barrier Tunneling

scholarly journals Nanoparticle floating-gate transistor memory based on solution-processed ambipolar organic semiconductor

2020 ◽  
Vol 185 ◽  
pp. 04071
Author(s):  
Sheng Sun ◽  
Shengdong Zhang
Keyword(s):  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Floating Gate ◽  
Pmma Film ◽  
Organic Thin Film ◽  
Simple Method ◽  
Solution Processed ◽  
Floating Gate Transistor ◽  
Electron Carriers ◽  
Bipolar Semiconductor

Organic thin-film transistor memory based on nano-floating-gate nonvolatile memory was demonstrated by a simple method. The gold nanoparticle that fabricated by thermally evaporated acted as the floating gate. Spin coated PMMA film acted as the tunneling layer. A solution-processed ambipolar semiconductor acted as the active layer. Because of the existence of both hole and electron carriers in bipolar semiconductor materials, it is more conducive to the editing and erasing of memories under positive and negative pressure. The memory based on metal nanoparticles and organic bipolar semiconductor shows good read-write function.

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