Control of field-effect transistor threshold voltages by insertion of self-assembled monolayers

2013 ◽  
Vol 113 (3) ◽  
pp. 034501 ◽  
Author(s):  
T. Ojima ◽  
M. Koto ◽  
M. Itoh ◽  
T. Imamura
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Self Assembled Monolayers ◽  
Threshold Voltages ◽  
Assembled Monolayers ◽  
Effect Transistor ◽  
Self Assembled

scholarly journals Built-in water resistance in organic transistors modified with self-assembled monolayers

RSC Advances ◽  
2014 ◽  
Vol 4 (85) ◽  
pp. 45082-45087 ◽  
Author(s):  
Boseok Kang ◽  
Wi Hyoung Lee ◽  
Hyun Ho Choi ◽  
Yeong Don Park ◽  
Kilwon Cho
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Water Resistance ◽  
Gate Dielectric ◽  
Self Assembled Monolayers ◽  
Organic Transistors ◽  
Self Assembled Monolayer ◽  
Assembled Monolayers ◽  
Effect Transistor ◽  
Self Assembled

We systematically investigated the effects of a self-assembled monolayer (SAM), prepared on the gate dielectric, on the performances of bottom-gate organic field-effect transistor (OFET) devices under various humid environments.

scholarly journals A Surface Modifier for the Production of Selectively Activated Amino Surface Groups

Coatings ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 726
Author(s):  
Kirill Puchnin ◽  
Vitaliy Grudtsov ◽  
Maria Andrianova ◽  
Stanislav Bezzubov ◽  
Alexander Kuznetsov
Keyword(s):  
Field Effect Transistor ◽  
Self Assembled Monolayers ◽  
Amino Groups ◽  
Important Goal ◽  
Self Assembled Monolayer ◽  
Surface Modifier ◽  
Assembled Monolayers ◽  
Sensitive Sensor ◽  
Effect Transistor ◽  
Self Assembled

The formation of self-assembled monolayers with the possibility of selective activation is an important goal of surface chemistry. In this work, a new surface modifier which creates amino surfaces based on aminopropylsilatrane (APS) with a protected amino group was obtained. The utilization of protected APS allows producing a self-assembled monolayer (SAM) and obtaining reactive surface amino groups at distinct times. Furthermore, a precise selective deprotection with a further modification of the activated amino groups could be performed without affecting the protected groups. To demonstrate the practical applicability of this modifier, a trinitrotoluene-sensitive sensor based on an ion-sensitive field-effect transistor (ISFET) was obtained.

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