Abnormal substrate temperature dependent out-of-plane anisotropy in FeCoNbB amorphous films

2012 ◽  
Vol 101 (23) ◽  
pp. 232408 ◽  
Author(s):  
Youxing Yu ◽  
Youran Yang ◽  
Yijiao Shan ◽  
Xiaofang Bi
Keyword(s):  
Substrate Temperature ◽  
Temperature Dependent ◽  
Amorphous Films ◽  
Plane Anisotropy ◽  
Out Of Plane

Thickness and Temperature Dependent Out-of-Plane Anisotropy of Amorphous CoSiB Thin Films

2018 ◽  
Vol 255 (8) ◽  
pp. 1800041 ◽  
Author(s):  
Yu Zhang ◽  
San-Sheng Wang ◽  
Fang Li ◽  
Wen Jiang ◽  
Zhu-Li Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependent ◽  
Plane Anisotropy ◽  
Out Of Plane

Pinning-assisted out-of-plane anisotropy in reverse stack FeCo/FePt intermetallic bilayers for controlled switching in spintronics

2021 ◽  
pp. 160249
Author(s):  
Garima Vashisht ◽  
Utkarsh Shashank ◽  
Surbhi Gupta ◽  
Rohit Medwal ◽  
C.L. Dong ◽  
...  
Keyword(s):  
Controlled Switching ◽  
Plane Anisotropy ◽  
Out Of Plane

scholarly journals Origin of perpendicular magnetic anisotropy in amorphous thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Daniel Lordan ◽  
Guannan Wei ◽  
Paul McCloskey ◽  
Cian O’Mathuna ◽  
Ansar Masood
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Perpendicular Magnetic Anisotropy ◽  
Functional Materials ◽  
Spin Reorientation ◽  
Amorphous Films ◽  
Amorphous Thin Films ◽  
Magnetic Performance ◽  
Out Of Plane ◽  
Sputtering Pressure

AbstractThe emergence of perpendicular magnetic anisotropy (PMA) in amorphous thin films, which eventually transforms the magnetic spins form an in-plane to the out-of-plane configuration, also known as a spin-reorientation transition (SRT), is a fundamental roadblock to attain the high flux concentration advantage of these functional materials for broadband applications. The present work is focused on unfolding the origin of PMA in amorphous thin films deposited by magnetron sputtering. The amorphous films were deposited under a broad range of sputtering pressure (1.6–6.2 mTorr), and its effect on the thin film growth mechanisms was correlated to the static global magnetic behaviours, magnetic domain structure, and dynamic magnetic performance. The films deposited under low-pressure revealed a dominant in-plane uniaxial anisotropy along with an emerging, however feeble, perpendicular component, which eventually evolved as a dominant PMA when deposited under high-pressure sputtering. This change in the nature of anisotropy redefined the orientation of spins from in-plane to out-of-plane. The SRT in amorphous films was attributed to the dramatic change in the growth mechanism of disorder atomic structure from a homogeneously dispersed to a porous columnar microstructure. We suggest the origin of PMA is associated with the columnar growth of the amorphous films, which can be eluded by a careful selection of a deposition pressure regime to avoid its detrimental effect on the soft magnetic performance. To the author’s best knowledge, no such report links the sputtering pressure as a governing mechanism of perpendicular magnetisation in technologically important amorphous thin films.

Effect of oxygen stoichiometry on the out-of-plane anisotropy of YBa2Cu3O7-deltasingle crystals near optimal doping

1999 ◽  
Vol 12 (10) ◽  
pp. 690-693 ◽  
Author(s):  
S Kokkaliaris ◽  
K Deligiannis ◽  
M Oussena ◽  
A A Zhukov ◽  
P A J de Groot ◽  
...  
Keyword(s):  
Oxygen Stoichiometry ◽  
Optimal Doping ◽  
Plane Anisotropy ◽  
Out Of Plane ◽  
Effect Of Oxygen

scholarly journals Thermal transport properties of decagonal quasicrystals and their approximants

2013 ◽  
Vol 1517 ◽  
Author(s):  
Petar Popčević ◽  
Ante Bilušić ◽  
Kristijan Velebit ◽  
Ana Smontara
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Transport Properties ◽  
Heat Transport ◽  
Thermal Transport ◽  
Strong Relationship ◽  
Decagonal Quasicrystal ◽  
Decagonal Quasicrystals ◽  
Plane Anisotropy ◽  
Out Of Plane

ABSTRACTTransport properties (thermal conductivity, electrical resistivity and thermopower) of decagonal quasicrystal d-AlCoNi, and approximant phases Y-AlCoNi, o-Al13Co4, m-Al13Fe4, m-Al13(Fe,Ni)4 and T-AlMnFe have been reviewed. Among all presented alloys the stacking direction (periodic for decagonal quasicrystals) is the most conductive one for the charge and heat transport, and the in/out-of-plane anisotropy is much larger than the in-plane anisotropy. There is a strong relationship between periodicity length along stacking direction and anisotropy of transport properties in both quasicrystals and their approximants suggesting a decrease of the anisotropy with increasing number of stacking layers.

scholarly journals Stability of in-plane and out-of-plane chiral skyrmions in epitaxial MnSi(111)/Si(111) thin films: Surface twists versus easy-plane anisotropy

2020 ◽  
Vol 102 (17) ◽  
Author(s):  
Andrey O. Leonov ◽  
Ivan M. Tambovtcev ◽  
Igor S. Lobanov ◽  
Valery M. Uzdin
Keyword(s):  
Thin Films ◽  
Easy Plane ◽  
Plane Anisotropy ◽  
Out Of Plane
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