Silicon nanocrystals prepared by plasma enhanced chemical vapor deposition: Importance of parasitic oxidation for third generation photovoltaic applications

2012 ◽  
Vol 101 (19) ◽  
pp. 193103 ◽  
Author(s):  
A. M. Hartel ◽  
S. Gutsch ◽  
D. Hiller ◽  
C. Kübel ◽  
N. Zakharov ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Chemical Vapor ◽  
Third Generation ◽  
Photovoltaic Applications

Soft landing of silicon nanocrystals in plasma enhanced chemical vapor deposition

2006 ◽  
Vol 88 (20) ◽  
pp. 203111 ◽  
Author(s):  
Nihed Chaâbane ◽  
Veinardi Suendo ◽  
Holger Vach ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Chemical Vapor ◽  
Soft Landing

Growth of Highly Luminescent Silicon Nanocrystals by Rapid Thermal Chemical Vapor Deposition

2005 ◽  
Vol 277-279 ◽  
pp. 977-982 ◽  
Author(s):  
Hea Jeong Cheong ◽  
Jung Hyun Kang ◽  
Jae Kwon Kim ◽  
Kim Yong
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Thickness Variation ◽  
Deposition Condition ◽  
Thermal Chemical Vapor Deposition ◽  
Si Nanocrystals ◽  
Si Wafer

We investigate the growth of highly luminescent silicon nanocrystals by rapid thermal chemical vapor deposition (RTCVD), employing SiH4 and N2O as source gases. For [N2O]/[SiH4] = 7 ∼ 8 and a growth temperature of 650°C, we obtain the optimized deposition condition for silicon rich oxide (SRO) layer having highly luminescent Si nanocrystals after post-deposition annealing. The cross sectional transmission electron microscope investigation reveals the existence of Si nanocrystals in the SRO matrix. Thus, the photoluminescence (PL) from the SRO layer is attributed to the quantum confinement effect of carriers in Si nanocrystals. Based on a single layer growth study, we fabricate ultra-thin SRO/SiO2 superlattice having 25 periods on a 3-inch Si wafer. The superlattice has continuous thickness variation from the center to the edge positions of the Si wafer due to inherent wafer temperature variation during growth. Photoluminescence spectra show a systematic blue-shift from a thicker position (center position) to a thinner position (edge position) which is indicative of nanocrystal size control by SRO layer thickness in the superlattice.

Growth of Silicon Nanocrystals by Low-Temperature Photo Chemical Vapor Deposition

2005 ◽  
Vol 45 (1) ◽  
pp. L46-L49 ◽  
Author(s):  
Sang Soo Kim ◽  
Kee In Bang ◽  
Joonghwan Kwak ◽  
Koeng Su Lim
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Chemical Vapor

Formation of size-controlled silicon nanocrystals in plasma enhanced chemical vapor deposition grown SiOxNy/SiO2 superlattices

2011 ◽  
Vol 520 (1) ◽  
pp. 121-125 ◽  
Author(s):  
A.M. Hartel ◽  
D. Hiller ◽  
S. Gutsch ◽  
P. Löper ◽  
S. Estradé ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Chemical Vapor ◽  
Size Controlled

Nonlinear optical properties of silicon nanocrystals grown by plasma-enhanced chemical vapor deposition

2002 ◽  
Vol 91 (7) ◽  
pp. 4607-4610 ◽  
Author(s):  
G. Vijaya Prakash ◽  
M. Cazzanelli ◽  
Z. Gaburro ◽  
L. Pavesi ◽  
F. Iacona ◽  
...  
Keyword(s):  
Optical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Silicon Nanocrystals ◽  
Nonlinear Optical ◽  
Chemical Vapor ◽  
Nonlinear Optical Properties
Sign in / Sign up

Export Citation Format

Share Document