Size-dependent phase transition of graphite to superhard graphite under high pressure at room temperature

2012 ◽  
Vol 112 (10) ◽  
pp. 103707 ◽  
Author(s):  
Cailong Liu ◽  
Yonghao Han ◽  
Quan Li ◽  
Yanzhang Ma ◽  
Yanming Ma ◽  
...  
Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 75 ◽  
Author(s):  
Linfei Yang ◽  
Lidong Dai ◽  
Heping Li ◽  
Haiying Hu ◽  
Meiling Hong ◽  
...  

The phase stability of epsomite under a high temperature and high pressure were explored through Raman spectroscopy and electrical conductivity measurements in a diamond anvil cell up to ~623 K and ~12.8 GPa. Our results verified that the epsomite underwent a pressure-induced phase transition at ~5.1 GPa and room temperature, which was well characterized by the change in the pressure dependence of Raman vibrational modes and electrical conductivity. The dehydration process of the epsomite under high pressure was monitored by the variation in the sulfate tetrahedra and hydroxyl modes. At a representative pressure point of ~1.3 GPa, it was found the epsomite (MgSO4·7H2O) started to dehydrate at ~343 K, by forming hexahydrite (MgSO4·6H2O), and then further transformed into magnesium sulfate trihydrate (MgSO4·3H2O) and anhydrous magnesium sulfate (MgSO4) at higher temperatures of 373 and 473 K, respectively. Furthermore, the established P-T phase diagram revealed a positive relationship between the dehydration temperature and the pressure for epsomite.


2003 ◽  
Vol 74 (1) ◽  
pp. 732-734 ◽  
Author(s):  
M. Villagrán-Muniz ◽  
M. Navarrete ◽  
E. V. Mejı́a-Uriarte

1999 ◽  
Vol 26 (3) ◽  
pp. 212-216 ◽  
Author(s):  
T. Hattori ◽  
T. Matsuda ◽  
T. Tsuchiya ◽  
T. Nagai ◽  
T. Yamanaka

1994 ◽  
Vol 72 (9-10) ◽  
pp. 681-682 ◽  
Author(s):  
K. V. Savchenko ◽  
V. V. Shchennikov

Ga2Se3 crystals with an excess of Se were grown by the Bridgman–Stockbarger method and had a defect zinc blende structure with a0 = 5.42 Å [Formula: see text] (1 Å = 10−10 m). At room temperature the resistivity was equal to (4.5 ± 1.5) × 1011 Ω cm, the thermoelectric power was (−1.1 ± 0.1) mV K−1 and the Vickers microhardness was (357 ± 9) kg mm−2. The gamma-induced conductivity was measured in the gamma-emitting power range of 3–340 rad s−1. Pressure dependencies of electrical resistance and thermoelectric power at room temperature allowed us to determine a phase transition of the semiconductor–semiconductor type at 14.2 GPa.


2000 ◽  
Vol 76 (20) ◽  
pp. 2874-2876 ◽  
Author(s):  
Liling Sun ◽  
W. K. Wang ◽  
D. W. He ◽  
W. H. Wang ◽  
Q. Wu ◽  
...  

2006 ◽  
Vol 971 ◽  
Author(s):  
Bertil Sundqvist ◽  
Alexandr V. Talyzin ◽  
Ove Andersson

ABSTRACTThe pressure-temperature phase diagrams of alkali metal alanates and borohydrides are of large current interest, and we have recently studied phase transformations under pressure in several of these materials. We here report Raman studies of KBH4 under pressure at room temperature, showing a phase transition near 6 GPa. Although no structural information is yet available, the similarity between KBH4 and NaBH4 suggests the new structure is orthorhombic. We also report studies on LiBH4 showing that the high pressure phase of this material is metastable to zero pressure below 200 K.


2008 ◽  
Vol 19 (4) ◽  
pp. 045707 ◽  
Author(s):  
Zhengtao Deng ◽  
Zhongxing Bao ◽  
Li Cao ◽  
Dong Chen ◽  
Fangqiong Tang ◽  
...  

2018 ◽  
Vol 112 (14) ◽  
pp. 143102 ◽  
Author(s):  
Xiangting Ren ◽  
Xiaozhi Yan ◽  
Zhenhai Yu ◽  
Wentao Li ◽  
Ke Yang ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document