Clinopyroxene-perovskite phase transition of FeGeO 3 under high pressure and room temperature

1999 ◽  
Vol 26 (3) ◽  
pp. 212-216 ◽  
Author(s):  
T. Hattori ◽  
T. Matsuda ◽  
T. Tsuchiya ◽  
T. Nagai ◽  
T. Yamanaka
Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 75 ◽  
Author(s):  
Linfei Yang ◽  
Lidong Dai ◽  
Heping Li ◽  
Haiying Hu ◽  
Meiling Hong ◽  
...  

The phase stability of epsomite under a high temperature and high pressure were explored through Raman spectroscopy and electrical conductivity measurements in a diamond anvil cell up to ~623 K and ~12.8 GPa. Our results verified that the epsomite underwent a pressure-induced phase transition at ~5.1 GPa and room temperature, which was well characterized by the change in the pressure dependence of Raman vibrational modes and electrical conductivity. The dehydration process of the epsomite under high pressure was monitored by the variation in the sulfate tetrahedra and hydroxyl modes. At a representative pressure point of ~1.3 GPa, it was found the epsomite (MgSO4·7H2O) started to dehydrate at ~343 K, by forming hexahydrite (MgSO4·6H2O), and then further transformed into magnesium sulfate trihydrate (MgSO4·3H2O) and anhydrous magnesium sulfate (MgSO4) at higher temperatures of 373 and 473 K, respectively. Furthermore, the established P-T phase diagram revealed a positive relationship between the dehydration temperature and the pressure for epsomite.


2003 ◽  
Vol 74 (1) ◽  
pp. 732-734 ◽  
Author(s):  
M. Villagrán-Muniz ◽  
M. Navarrete ◽  
E. V. Mejı́a-Uriarte

2005 ◽  
Vol 32 (10) ◽  
pp. 721-725 ◽  
Author(s):  
Shigehiko Tateno ◽  
Kei Hirose ◽  
Nagayoshi Sata ◽  
Yasuo Ohishi

1994 ◽  
Vol 72 (9-10) ◽  
pp. 681-682 ◽  
Author(s):  
K. V. Savchenko ◽  
V. V. Shchennikov

Ga2Se3 crystals with an excess of Se were grown by the Bridgman–Stockbarger method and had a defect zinc blende structure with a0 = 5.42 Å [Formula: see text] (1 Å = 10−10 m). At room temperature the resistivity was equal to (4.5 ± 1.5) × 1011 Ω cm, the thermoelectric power was (−1.1 ± 0.1) mV K−1 and the Vickers microhardness was (357 ± 9) kg mm−2. The gamma-induced conductivity was measured in the gamma-emitting power range of 3–340 rad s−1. Pressure dependencies of electrical resistance and thermoelectric power at room temperature allowed us to determine a phase transition of the semiconductor–semiconductor type at 14.2 GPa.


2000 ◽  
Vol 76 (20) ◽  
pp. 2874-2876 ◽  
Author(s):  
Liling Sun ◽  
W. K. Wang ◽  
D. W. He ◽  
W. H. Wang ◽  
Q. Wu ◽  
...  

2012 ◽  
Vol 112 (10) ◽  
pp. 103707 ◽  
Author(s):  
Cailong Liu ◽  
Yonghao Han ◽  
Quan Li ◽  
Yanzhang Ma ◽  
Yanming Ma ◽  
...  

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