Short channel effects on gallium nitride/gallium oxide nanowire transistors

2012 ◽  
Vol 101 (18) ◽  
pp. 183501 ◽  
Author(s):  
J.-W. Yu ◽  
P.-C. Yeh ◽  
S.-L. Wang ◽  
Y.-R. Wu ◽  
M.-H. Mao ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Gallium Oxide ◽  
Short Channel Effects ◽  
Short Channel ◽  
Nanowire Transistors ◽  
Channel Effects

Investigation of Short-Channel Effects in Junctionless Nanowire Transistors

2011 ◽  
Author(s):  
P. Razavi ◽  
N. Dehdashti Akhavan ◽  
R. Yu ◽  
G. Fagas ◽  
I. Ferain ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Nanowire Transistors ◽  
Channel Effects

scholarly journals Drain Current and Short Channel Effects Modeling in Junctionless Nanowire Transistors

2013 ◽  
Vol 8 (2) ◽  
pp. 116-124
Author(s):  
Renan D. Trevisoli ◽  
Rodrigo T. Doria ◽  
Michelly De Souza ◽  
Marcelo Antonio Pavanello
Keyword(s):  
Threshold Voltage ◽  
Drain Current ◽  
Short Channel Effects ◽  
Subthreshold Slope ◽  
Short Channel ◽  
Nanowire Transistors ◽  
Channel Effects ◽  
20 Nm ◽  
Analytical Expressions ◽  
Controlled Doping

Junctionless nanowire transistors (JNTs) are considered promising for the sub-20 nm era, since they provide a great scalability without the need for rigorously controlled doping techniques. In this work, the modeling of triple-gate JNTs is addressed, focusing on the short-channel effects. Analytical expressions for the subthreshold slope, threshold voltage roll-off and drain induced barrier lowering are presented. The model is validated using tridimensional numerical simulations.

Accounting for Short Channel Effects in the Drain Current Modeling of Junctionless Nanowire Transistors

2012 ◽  
Vol 49 (1) ◽  
pp. 207-214 ◽  
Author(s):  
R. D. Trevisoli ◽  
R. T. Doria ◽  
M. de Souza ◽  
M. A. Pavanello
Keyword(s):  
Drain Current ◽  
Short Channel Effects ◽  
Short Channel ◽  
Nanowire Transistors ◽  
Channel Effects

Monte Carlo study of 50 nm-long single and dual-gate MODFETs: suppression of short-channel effects

1993 ◽  
Vol 3 (9) ◽  
pp. 1719-1728
Author(s):  
P. Dollfus ◽  
P. Hesto ◽  
S. Galdin ◽  
C. Brisset
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Dual Gate

Semi-Analytical Modeling of Short-Channel Effects in Si and Ge Symmetrical Double-Gate MOSFETs

2007 ◽  
Vol 54 (8) ◽  
pp. 1943-1952 ◽  
Author(s):  
A. Tsormpatzoglou ◽  
C.A. Dimitriadis ◽  
R. Clerc ◽  
Q. Rafhay ◽  
G. Pananakakis ◽  
...  
Keyword(s):  
Analytical Modeling ◽  
Double Gate ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects

Short-channel effects in SOI MOSFETs

1989 ◽  
Vol 36 (3) ◽  
pp. 522-528 ◽  
Author(s):  
S. Veeraraghavan ◽  
J.G. Fossum
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects
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