Lithiation-induced tensile stress and surface cracking in silicon thin film anode for rechargeable lithium battery

2012 ◽  
Vol 112 (9) ◽  
pp. 093507 ◽  
Author(s):  
Ping Liu ◽  
N. Sridhar ◽  
Yong-Wei Zhang
Keyword(s):  
Thin Film ◽  
Tensile Stress ◽  
Lithium Battery ◽  
Silicon Thin Film ◽  
Rechargeable Lithium Battery ◽  
Surface Cracking

Amorphous FePy (0.1

2013 ◽  
Vol 33 ◽  
pp. 102-106 ◽  
Author(s):  
In-Tae Park ◽  
Heon-Cheol Shin
Keyword(s):  
Thin Film ◽  
Lithium Battery ◽  
Rechargeable Lithium Battery

A rechargeable lithium battery employing a porous thin film of Cu3+δMo6S7.9

1987 ◽  
Vol 20 (3-4) ◽  
pp. 199-204 ◽  
Author(s):  
Masataka Wakihara ◽  
Takashi Uchida ◽  
Takashi Morishita ◽  
Hideaki Wakamatsu ◽  
Masao Taniguchi
Keyword(s):  
Thin Film ◽  
Lithium Battery ◽  
Rechargeable Lithium Battery ◽  
Porous Thin Film

The relaxation of compressive biaxial strains in SOS via microtwins

1989 ◽  
Vol 47 ◽  
pp. 608-609
Author(s):  
M. E. Twigg ◽  
E. D. Richmond ◽  
J. G. Pellegrino
Keyword(s):  
Thin Film ◽  
Chemical Vapor Deposition ◽  
Molecular Beam Epitaxy ◽  
Compressive Stress ◽  
Vapor Deposition ◽  
Partial Dislocation ◽  
Molecular Beam ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Silicon Thin Film

For heteroepitaxial systems, such as silicon on sapphire (SOS), microtwins occur in significant numbers and are thought to contribute to strain relief in the silicon thin film. The size of this contribution can be assessed from TEM measurements, of the differential volume fraction of microtwins, dV/dν (the derivative of the microtwin volume V with respect to the film volume ν), for SOS grown by both chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).In a (001) silicon thin film subjected to compressive stress along the [100] axis , this stress can be relieved by four twinning systems: a/6[211]/( lll), a/6(21l]/(l1l), a/6[21l] /( l1l), and a/6(2ll)/(1ll).3 For the a/6[211]/(1ll) system, the glide of a single a/6[2ll] twinning partial dislocation draws the two halves of the crystal, separated by the microtwin, closer together by a/3.

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