Characterization of Sputter-Deposited LiCoO2 Thin Film Grown on NASICON-type Electrolyte for Application in All-Solid-State Rechargeable Lithium Battery

2017 ◽  
Vol 9 (19) ◽  
pp. 16063-16070 ◽  
Author(s):  
Hee-Soo Kim ◽  
Yoong Oh ◽  
Ki Hoon Kang ◽  
Ju Hwan Kim ◽  
Joosun Kim ◽  
...  
2011 ◽  
Vol 196 (2) ◽  
pp. 764-767 ◽  
Author(s):  
Ki Hyun Kim ◽  
Yasutoshi Iriyama ◽  
Kazuo Yamamoto ◽  
Shota Kumazaki ◽  
Toru Asaka ◽  
...  

2010 ◽  
Vol 195 (17) ◽  
pp. 5780-5783 ◽  
Author(s):  
J. Xie ◽  
N. Imanishi ◽  
T. Zhang ◽  
A. Hirano ◽  
Y. Takeda ◽  
...  

Vacuum ◽  
2008 ◽  
Vol 83 (3) ◽  
pp. 602-605 ◽  
Author(s):  
Kazuki Tajima ◽  
Yasusei Yamada ◽  
Shanhu Bao ◽  
Masahisa Okada ◽  
Kazuki Yoshimura

1997 ◽  
Vol 7 (C2) ◽  
pp. C2-1243-C2-1244 ◽  
Author(s):  
I. Nakai ◽  
K. Takahash ◽  
Y. Shiraishi ◽  
T. Nakagome

Author(s):  
XiaoPing Liang ◽  
FeiHu Tan ◽  
Feng Wei ◽  
Jun Du

2013 ◽  
Vol 33 ◽  
pp. 102-106 ◽  
Author(s):  
In-Tae Park ◽  
Heon-Cheol Shin

2008 ◽  
Vol 388 ◽  
pp. 97-100 ◽  
Author(s):  
Masao Ohashi

The layer structured titanate KxTi2-xFexO4 (x = 0.80) with the lepidocrocite (-FeOOH) type structure has been prepared in a solid state reaction using K2CO3, anatase type TiO2 and -Fe2O3 at 1373 K. Ion exchange reactions of K+ in the interlayer space were studied in aqueouse solutions. The host layers of the titanate were maintained on the ion exchange reactions and the resulting products were found to contain interlayer water. The interlayer water in the hydrogen ion exchange product was removed by heating at 383 K in a vacuum. The resulting titanate H0.79K0.01Ti1.20Fe0.80O4 was evaluated for its use as the cathode in a rechargeable lithium battery. The cathode exhibited discharge and charge capacities of 107 and 69 mAh/g for the first cycle in the voltage range of 1.5 - 4.2 V.


1994 ◽  
Vol 345 ◽  
Author(s):  
Paul H. Holloway ◽  
J.-E. Yu ◽  
Phillip Rack ◽  
Joseph Sebastian ◽  
Sean Jones ◽  
...  

AbstractFollowing a description of the purpose and participating members in the Phosphor Technology Center of Excellence, research on the growth and characterization of modulation doped ZnS:Mn and of Ca0.95Sr0.05Ga2S4:6%Ce are reported. ZnS:Mn has been grown using MOCVD and incorporation of Mn in 1 to 5 layers from 5 to 20 nm thick separated by layers of pure ZnS from 5 to 50 nm thick. This is shown to result in lower threshold voltages for ACTFELD displays. The luminescence spectra from sputter deposited, cerium-doped thiogallate thin films were measured and the diffusion of thin ZnS passivation layers versus temperature of heat treatment was discussed.


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