Degenerate crystalline silicon films by aluminum-induced crystallization of boron-doped amorphous silicon

2012 ◽  
Vol 101 (15) ◽  
pp. 152108 ◽  
Author(s):  
J. D. Hwang ◽  
L. C. Luo ◽  
T. J. Hsueh ◽  
S. B. Hwang
Keyword(s):  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Silicon Films ◽  
Boron Doped ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Effect of stress on the aluminum-induced crystallization of hydrogenated amorphous silicon films

2006 ◽  
Vol 21 (10) ◽  
pp. 2582-2586 ◽  
Author(s):  
Maruf Hossain ◽  
Husam H. Abu-Safe ◽  
Hameed Naseem ◽  
William D. Brown
Keyword(s):  
Amorphous Silicon ◽  
Initial Stress ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Radius Of Curvature ◽  
Si Substrates ◽  
Before And After ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The effect of stress, resulting from the presence of hydrogen, on the aluminum-induced crystallization of hydrogenated amorphous silicon films was studied. Layered thin films of hydrogenated and unhydrogenated amorphous silicon and aluminum, deposited by sputtering, were used to study this effect. The stress of the deposited films was determined by measuring the radius of curvature of c-Si substrates before and after deposition of the films. It was observed that unhydrogenated amorphous silicon films exhibit a high compressive stress compared with hydrogenated ones. The amount of stress is shown to decrease with increasing hydrogen content. It was also observed that aluminum always provides tensile stress. After the initial stress measurements, all the samples were annealed for 30 min at temperatures between 200 °C and 400 °C. X-ray diffraction was used to determine the crystallinity of the silicon films. The results of the study show that the temperature at which crystallization of amorphous silicon is initiated is lower for films with a lower initial stress.

Epitaxial Silicon Thin Films by Low Temperature Aluminum Induced Crystallization of Amorphous Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Khalil Sharif ◽  
Husam H. Abu-Safe ◽  
Hameed A. Naseem ◽  
William D. Brown ◽  
Mowafak Al-Jassim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Chemical Vapor Deposition Method ◽  
Diffraction Spectrum ◽  
Epitaxial Silicon ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractEpitaxial silicon thin film growth has been achieved on crystalline silicon substrates using aluminum induced crystallization of amorphous silicon. The phenomenon of layer inversion has been utilized in this process. Silicon wafers <100> were used as the starting crystalline structure for the grown films. After the wafer is cleaned a thin layer of aluminum (300 nm) was deposited by sputtering. This deposition was followed by 300 nm film of amorphous silicon deposited using plasma enhanced chemical vapor deposition method. After annealing the samples for 40 minutes at 525 °C, a continuous film of silicon was formed on the silicon substrate. X-ray diffraction spectrum indicated that this film has the same orientation as that of the substrate. Scanning electron microscopy cross section images showed indistinguishable interface between the substrate and the crystallized film. Cross sectional transmission electron microscopy studies of the crystallized structure showed epitaxial nature of the films.

Hydrophobic Surfaces Prepared by Aluminum-Induced Crystallization of Amorphous Silicon

2007 ◽  
Author(s):  
Ying Song ◽  
Rahul Premachandran Nair ◽  
Min Zou
Keyword(s):  
Amorphous Silicon ◽  
Annealing Temperature ◽  
Textured Surfaces ◽  
Surface Wetting ◽  
Water Contact ◽  
Annealing Conditions ◽  
Wetting Property ◽  
Percentage Area ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

This paper reports fabrication and understanding of hydrophobic silicon nano-textured surfaces produced by aluminum-induced crystallization (AIC) of amorphous silicon (a-Si). In this study, the effects of annealing temperature and duration on surface topography and wetting property were investigated. The results showed that surface wetting property directly correlates with the percentage area coverage by the nano-textures, which in turn was determined by the annealing conditions. The largest water contact angle (WCA) obtained from this research is 137°.

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