scholarly journals Kinetics of color center formation in silica irradiated with swift heavy ions: Thresholding and formation efficiency

2012 ◽  
Vol 101 (15) ◽  
pp. 154103 ◽  
Author(s):  
J. Manzano-Santamaría ◽  
J. Olivares ◽  
A. Rivera ◽  
O. Peña-Rodríguez ◽  
F. Agulló-López
Keyword(s):  
Color Center ◽  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Formation Efficiency ◽  
Kinetics Of

Color-center creation inLiFunder irradiation with swift heavy ions: Dependence on energy loss and fluence

2004 ◽  
Vol 70 (18) ◽  
Author(s):  
K. Schwartz ◽  
C. Trautmann ◽  
A. S. El-Said ◽  
R. Neumann ◽  
M. Toulemonde ◽  
...  
Keyword(s):  
Energy Loss ◽  
Color Center ◽  
Heavy Ions ◽  
Swift Heavy Ions

scholarly journals In-situ kinetics of modifications induced by swift heavy ions in Al2O3: Colour centre formation, structural modification and amorphization

2017 ◽  
Vol 140 ◽  
pp. 157-167 ◽  
Author(s):  
C. Grygiel ◽  
F. Moisy ◽  
M. Sall ◽  
H. Lebius ◽  
E. Balanzat ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Structural Modification ◽  
Colour Centre ◽  
Swift Heavy Ions ◽  
Kinetics Of

Color Center Creation in SiO2 Under Irradiation with Swift Heavy Ions: Dependence on Energy Loss

2012 ◽  
Vol 33 (10) ◽  
pp. 1049-1054
Author(s):  
宋银 SONG Yin ◽  
孟彦成 MENG Yan-cheng ◽  
张崇宏 ZHANG Chong-hong ◽  
杨义涛 YANG Yi-tao ◽  
李锦钰 LI Jin-yu ◽  
...  
Keyword(s):  
Energy Loss ◽  
Color Center ◽  
Heavy Ions ◽  
Swift Heavy Ions

scholarly journals Kinetics of amorphization induced by swift heavy ions in α-quartz

2012 ◽  
Vol 430 (1-3) ◽  
pp. 125-131 ◽  
Author(s):  
O. Peña-Rodríguez ◽  
J. Manzano-Santamaría ◽  
A. Rivera ◽  
G. García ◽  
J. Olivares ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Swift Heavy Ions ◽  
Kinetics Of

Color center creation in SiO2 under irradiation with swift heavy ions: Dependence on energy loss and fluence

2013 ◽  
Vol 35 (5) ◽  
pp. 1057-1061 ◽  
Author(s):  
Yin Song ◽  
Chong-hong Zhang ◽  
Yi-tao Yang ◽  
Jie Gou ◽  
Li-qing Zhang ◽  
...  
Keyword(s):  
Energy Loss ◽  
Color Center ◽  
Heavy Ions ◽  
Swift Heavy Ions

scholarly journals Unravelling the secrets of the resistance of GaN to strongly ionising radiation

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Miguel C. Sequeira ◽  
Jean-Gabriel Mattei ◽  
Henrique Vazquez ◽  
Flyura Djurabekova ◽  
Kai Nordlund ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Ionising Radiation ◽  
Atomistic Simulations ◽  
Extended Defects ◽  
Swift Heavy Ions ◽  
High Fluences ◽  
Radiation Resistant ◽  
Simulation And Experiment ◽  
Underlying Mechanisms ◽  
Radiation Hard

AbstractGaN is the most promising upgrade to the traditional Si-based radiation-hard technologies. However, the underlying mechanisms driving its resistance are unclear, especially for strongly ionising radiation. Here, we use swift heavy ions to show that a strong recrystallisation effect induced by the ions is the key mechanism behind the observed resistance. We use atomistic simulations to examine and predict the damage evolution. These show that the recrystallisation lowers the expected damage levels significantly and has strong implications when studying high fluences for which numerous overlaps occur. Moreover, the simulations reveal structures such as point and extended defects, density gradients and voids with excellent agreement between simulation and experiment. We expect that the developed modelling scheme will contribute to improving the design and test of future radiation-resistant GaN-based devices.

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