scholarly journals Size dependent Cu dielectric function for plasmon spectroscopy: Characterization of colloidal suspension generated by fs laser ablation

2012 ◽  
Vol 112 (5) ◽  
pp. 054319 ◽  
Author(s):  
J. M. J. Santillán ◽  
F. A. Videla ◽  
M. B. Fernández van Raap ◽  
D. C. Schinca ◽  
L. B. Scaffardi
Keyword(s):  
Laser Ablation ◽  
Dielectric Function ◽  
Colloidal Suspension ◽  
Size Dependent ◽  
Fs Laser

Nanoscale Dielectric Function of Fe, Pt, Ti, Ta, Al, and V: Application to Characterization of Al Nanoparticles Synthesized by Fs Laser Ablation

Plasmonics ◽  
2016 ◽  
Vol 12 (6) ◽  
pp. 1813-1824 ◽  
Author(s):  
Luis J. Mendoza Herrera ◽  
David Muñetón Arboleda ◽  
Jesica M. J. Santillán ◽  
Marcela B. Fernández van Raap ◽  
Lucía B. Scaffardi ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Dielectric Function ◽  
Al Nanoparticles ◽  
Fs Laser

Fabrication and Characterization of Si Nano-Columns by Femtosecond Laser

2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Laser Beam ◽  
Chemical Etching ◽  
Silicon Surface ◽  
Laser Pulses ◽  
Laser Beam Profile ◽  
Fs Laser ◽  
Fabrication And Characterization

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.

Growth and characterization of β-SiC films obtained by fs laser ablation

2006 ◽  
Vol 252 (13) ◽  
pp. 4672-4677 ◽  
Author(s):  
C. Ghica ◽  
C. Ristoscu ◽  
G. Socol ◽  
D. Brodoceanu ◽  
L.C. Nistor ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Fs Laser ◽  
Sic Films

Characterization of aluminum, brass and steel nanoparticles after laser ablation

2009 ◽  
Author(s):  
Nancy Van Suetendael ◽  
Kristie Powell ◽  
Susan Earles ◽  
Mary Helen McCay ◽  
Ivica Kostanic
Keyword(s):  
Laser Ablation

Detection and Characterization of an Electrical Failure Induced during Laser Ablation of Packages

2008 ◽  
Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier
Keyword(s):  
Laser Ablation ◽  
Integrated Circuits ◽  
Failure Analysis ◽  
Ablation Process ◽  
Thermally Induced ◽  
Electrical Failure ◽  
Electrical Phenomenon ◽  
Semiconductor Packages ◽  
Complex Semiconductor

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.

From Semiconductor to Metal in a Flash: Observing Ultrafast Laser-Induced Phase Transformations

1997 ◽  
Vol 481 ◽  
Author(s):  
J. P. Callan ◽  
A. M.-T. Kim ◽  
L. Huangt ◽  
E. N. Glezer ◽  
E. Mazur
Keyword(s):  
Phase Transformations ◽  
Dielectric Function ◽  
Spectral Range ◽  
Laser Excitation ◽  
Spectroscopic Technique ◽  
Ultrafast Laser ◽  
Lattice Heating ◽  
Fs Laser

ABSTRACTWe use a new broadband spectroscopic technique to measure ultrafast changes in the dielectric function of a material over the spectral range 1.5–3.5 eV following intense 70-fs laser excitation. The results reveal the nature of the phase transformations which occur in the material following excitation. We studied the response of GaAs and Si. For GaAs, there are three distinct regimes of behavior as the pump fluence is increased — lattice heating, lattice disordering, and a semiconductor-to-metal transition.

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