Growth and characterization of β-SiC films obtained by fs laser ablation

2006 ◽  
Vol 252 (13) ◽  
pp. 4672-4677 ◽  
Author(s):  
C. Ghica ◽  
C. Ristoscu ◽  
G. Socol ◽  
D. Brodoceanu ◽  
L.C. Nistor ◽  
...  
Keyword(s):  
Fs Laser ◽  
2012 ◽  
Vol 16 ◽  
pp. 15-20 ◽  
Author(s):  
Omid Tayefeh Ghalehbeygi ◽  
Vural Kara ◽  
Levent Trabzon ◽  
Selcuk Akturk ◽  
Huseyin Kizil

We fabricated Si Nano-columns by a femtosecond laser with various wavelengths and process parameters, whilst the specimen was submerged in water. The experiments were carried out by three types of wavelengths i.e. 1030 nm, 515nm, 343nm, with 500 fs laser pulses. The scales of these spikes are much smaller than micro spikes that are constructed by laser irradiation of silicon surface in vacuum or gases like SF6, Cl2. The Si nano-columns of 300 nm or less in width were characterized by SEM measurements. The formation of these Si Nano-columns that were revealed by SEM observation, indicates chemical etching with laser ablation occurred when surface exposed by laser beam. We observed 200 nm spikes height at the center of laser beam profile and the ones uniform in height at lateral incident area.


Plasmonics ◽  
2016 ◽  
Vol 12 (6) ◽  
pp. 1813-1824 ◽  
Author(s):  
Luis J. Mendoza Herrera ◽  
David Muñetón Arboleda ◽  
Jesica M. J. Santillán ◽  
Marcela B. Fernández van Raap ◽  
Lucía B. Scaffardi ◽  
...  

2012 ◽  
Vol 112 (5) ◽  
pp. 054319 ◽  
Author(s):  
J. M. J. Santillán ◽  
F. A. Videla ◽  
M. B. Fernández van Raap ◽  
D. C. Schinca ◽  
L. B. Scaffardi

1993 ◽  
Vol 306 ◽  
Author(s):  
M.A. El Khakani ◽  
M. Chaker ◽  
S. Boily ◽  
A. Papadopoullos ◽  
Y. Huai ◽  
...  

AbstractLaser Ablation Deposition (LAD) technique was used to produce hydrogen-free SiC films on (100) Si substrate. Deposition temperatures of 300°C and 450°C were investigated. The Si2p and C1s. core levels and the Si-C absorption band of the a-SiC LAD films were characterized by using X-ray Photoelectron Spectroscopy (XPS) and Fourier-Transform Infra Red (FTIR) absorption spectroscopy, respectively. The high compressive stress of the as-deposited SiC films was released and controlled by means of rapid thermal annealing. A correlation between the stress evolution and the Si-C bond density of the annealed films is pointed out. Optical transmission and mechanical properties (stress, Young's modulus) measurements were carried out on the free-standing membranes fabricated from SiC LAD films. The effect of the deposition temperature on the SiC membrane properties is discussed.


Author(s):  
Nancy Van Suetendael ◽  
Kristie Powell ◽  
Susan Earles ◽  
Mary Helen McCay ◽  
Ivica Kostanic
Keyword(s):  

Author(s):  
P. Schwindenhammer ◽  
H. Murray ◽  
P. Descamps ◽  
P. Poirier

Abstract Decapsulation of complex semiconductor packages for failure analysis is enhanced by laser ablation. If lasers are potentially dangerous for Integrated Circuits (IC) surface they also generate a thermal elevation of the package during the ablation process. During measurement of this temperature it was observed another and unexpected electrical phenomenon in the IC induced by laser. It is demonstrated that this new phenomenon is not thermally induced and occurs under certain ablation conditions.


Sign in / Sign up

Export Citation Format

Share Document