Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si

2012 ◽  
Vol 101 (10) ◽  
pp. 103113 ◽  
Author(s):  
F. Panciera ◽  
K. Hoummada ◽  
M. Mastromatteo ◽  
D. De Salvador ◽  
E. Napolitani ◽  
...  
Keyword(s):  
Solid Phase ◽  
Three Dimensional ◽  
Epitaxial Regrowth ◽  
Amorphous Si

Three‐dimensional solid‐phase‐epitaxial regrowth from As+‐implanted Si

1989 ◽  
Vol 65 (6) ◽  
pp. 2238-2242 ◽  
Author(s):  
M. Horiuchi ◽  
M. Tamura ◽  
S. Aoki
Keyword(s):  
Solid Phase ◽  
Three Dimensional ◽  
Epitaxial Regrowth

Si-On-Sapphire and Si Implanted with Zr Ions: Lattice Location, Solid Phase Epitaxial Regrowth, and Electrical Properties

1982 ◽  
Vol 14 ◽  
Author(s):  
I. Golecki ◽  
I. Suni
Keyword(s):  
Electrical Properties ◽  
Surface Segregation ◽  
Solid Phase ◽  
Rutherford Backscattering ◽  
Lattice Location ◽  
Temperature Range ◽  
Epitaxial Regrowth ◽  
Amorphous Si ◽  
Solid Phase Regrowth

ABSTRACTZr ions have been implanted at 300 keV (Rp= 1400Å) and doses of 3×1012 − 3×l015 Zr/cm2 into Si-implanted, amorphous Sip layers on (100) bulk Si and Sion- sapphire. Rutherford backscattering and channeling spectrometry was used to study the Zr distribution and lattice location during solid-phase regrowth of the Si layers. The regrowth at 500—550°C stops at 3.4хl020 Zr/cm3, and Zr exhibits interface trapping and surface segregation effects. In this temperature range, Zr is essentially non-substitutional, and inactive electrically.

Solid Phase Epitaxial Regrowth of Microcrystalline Si Films on a (100) Si Substrate

1988 ◽  
Vol 100 ◽  
Author(s):  
S. Roorda ◽  
S. Saito ◽  
W. C. Sinke
Keyword(s):  
Grain Size ◽  
Solid Phase ◽  
Si Substrate ◽  
Two Stage ◽  
Annealing Behaviour ◽  
Explosive Crystallization ◽  
Epitaxial Regrowth ◽  
Amorphous Si ◽  
Si Films ◽  
Size And Structure

ABSTRACTMicrocrystalline Si, as produced by explosive crystallization of an amorphous Si layer on (100) Si, shows a two-stage annealing behaviour. Initially, solid phase epitaxial regrowth occurs very rapidly at temperatures at, or above 800°C. After a few seconds, the regrowth rate slows down to the value typical for alignment of poly-Si. Solid phase epitaxial regrowth of microcrystalline Si is suggested to be strongly dependent on grain size and structure.

Solid Phase Epitaxial Regrowth of Implantation Amorphized Si0.7Ge0.3 Grown on (100) Silicon

1991 ◽  
Vol 235 ◽  
Author(s):  
C. Lee ◽  
K. S. Jones
Keyword(s):  
Defect Density ◽  
Solid Phase ◽  
Three Dimensional ◽  
Stacking Faults ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Strained Layers ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Interfacial Strain

ABSTRACTThe solid phase epitaxial regrowth (SPER) process of implantation amorphized Si0.7Ge0.3 layers (850± Å thick) grown on (100) Si has been studied by cross-sectional transmission electron microscopy. For amorphous layers produced by 40 Ar+ implantation highly defective three dimensional regrowth was observed in both Si0.7Ge0.3 and Si. Stacking faults were the principle defect formed of both materials during regrowth. SPER after amorphization via 73 Ge+ implantation was also investigated. It was found that the SPER velocity of the 73 Ge+ implanted Si0.7 Ge0.7 Ge0.3 was about twice the velocity of the 40 Ar+ implanted samples; for 73 Ge+ implanted Si it was about three times that of the 40Ar+ implanted samples. The activation energy for SPER in 40Ar+ and in 73 Ge+ implanted Si0.7 Geo0.3 was about 1.6 and 2.6 eV, respectively. The defect density was significantly reduced in 73 Ge+ amorphized Si but not in the 73 Ge+ amorphized Si0.7 Ge0.3. It is proposed that limited Ar solubility inhibits high quality regrowth in both SiGe and Si. Upon 73 Ge+ amorphization and solid phase epitaxy the interfacial strain between the SiGe and Si cannot be accommodated. Thus the epitaxial process is poor in these SiGe strained layers regardless of the amorphizing species.

Characterization of Monoclonal Anti-human Factor VII Antibody (B101/B1) that Recognized Three-dimensional Structures near Arg at Position 79 in the First EGF-like Domain

1998 ◽  
Vol 79 (01) ◽  
pp. 104-109 ◽  
Author(s):  
Osamu Takamiya
Keyword(s):  
Monoclonal Antibodies ◽  
Tissue Factor ◽  
Human Factor ◽  
Solid Phase ◽  
Three Dimensional ◽  
Coagulation Factors ◽  
Factor Vii ◽  
Dimensional Structure ◽  
Epidermal Growth

SummaryMurine monoclonal antibodies (designated hVII-B101/B1, hVIIDC2/D4 and hVII-DC6/3D8) directed against human factor VII (FVII) were prepared and characterized, with more extensive characterization of hVII-B101/B1 that did not bind reduced FVIIa. The immunoglobulin of the three monoclonal antibodies consisted of IgG1. These antibodies did not inhibit procoagulant activities of other vitamin K-dependent coagulation factors except FVII and did not cross-react with proteins in the immunoblotting test. hVII-DC2/D4 recognized the light chain after reduction of FVIIa with 2-mercaptoethanol, and hVIIDC6/3D8 the heavy chain. hVII-B101/B1 bound FVII without Ca2+, and possessed stronger affinity for FVII in the presence of Ca2+. The Kd for hVII-B101/B1 to FVII was 1.75 x 10–10 M in the presence of 5 mM CaCl2. The antibody inhibited the binding of FVII to tissue factor in the presence of Ca2+. hVII-B101/B1 also inhibited the activation of FX by the complex of FVIIa and tissue factor in the presence of Ca2+. Furthermore, immunoblotting revealed that hVII-B101/B1 reacted with non-reduced γ-carboxyglutaminic acid (Gla)-domainless-FVII and/or FVIIa. hVII-B101/B1 showed a similar pattern to that of non-reduced proteolytic fragments of FVII by trypsin with hVII-DC2/D4 on immunoblotting test. hVII-B101/B1 reacted differently with the FVII from the dysfunctional FVII variant, FVII Shinjo, which has a substitution of Gln for Arg at residue 79 in the first epidermal growth factor (1st EGF)-like domain (Takamiya O, et al. Haemosta 25, 89-97,1995) compared with normal FVII, when used as a solid phase-antibody for ELISA by the sandwich method. hVII-B101/B1 did not react with a series of short peptide sequences near position 79 in the first EGF-like domain on the solid-phase support for epitope scanning. These results suggested that the specific epitope of the antibody, hVII-B101/B1, was located in the three-dimensional structure near position 79 in the first EGF-like domain of human FVII.

scholarly journals Prandtl Number in Classical Hard-Sphere and One-Component Plasma Fluids

Molecules ◽  
2021 ◽  
Vol 26 (4) ◽  
pp. 821
Author(s):  
Sergey Khrapak ◽  
Alexey Khrapak
Keyword(s):  
Prandtl Number ◽  
Hard Sphere ◽  
Solid Phase ◽  
Freezing Point ◽  
Three Dimensional ◽  
Order Unity ◽  
Strongly Coupled ◽  
Dielectric Fluids ◽  
Weakly Coupled ◽  
Component Plasma

The Prandtl number is evaluated for the three-dimensional hard-sphere and one-component plasma fluids, from the dilute weakly coupled regime up to a dense strongly coupled regime near the fluid-solid phase transition. In both cases, numerical values of order unity are obtained. The Prandtl number increases on approaching the freezing point, where it reaches a quasi-universal value for simple dielectric fluids of about ≃1.7. Relations to two-dimensional fluids are briefly discussed.

Performance of (110) p-channel SOI-MOSFETs fabricated by deep-amorphization and solid-phase epitaxial regrowth processes

2011 ◽  
Vol 88 (7) ◽  
pp. 1265-1268
Author(s):  
A. Ohata ◽  
Y. Bae ◽  
T. Signamarcheix ◽  
J. Widiez ◽  
B. Ghyselen ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth

Solid phase epitaxial regrowth of Si1−xGex/Si strained‐layer structures amorphized by ion implantation

1989 ◽  
Vol 54 (1) ◽  
pp. 42-44 ◽  
Author(s):  
B. T. Chilton ◽  
B. J. Robinson ◽  
D. A. Thompson ◽  
T. E. Jackman ◽  
J.‐M. Baribeau
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Strained Layer ◽  
Epitaxial Regrowth ◽  
Layer Structures

USJ formation using solid phase epitaxial regrowth and femtosencond laser anneal

2012 ◽  
Author(s):  
Tzu-Lang Shih ◽  
Sheng-Wen Chen ◽  
Chang-Peng Wu ◽  
Chung-Wei Cheng ◽  
Chih-Wei Chien ◽  
...  
Keyword(s):  
Solid Phase ◽  
Epitaxial Regrowth ◽  
Laser Anneal
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