Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice

2012 ◽  
Vol 101 (9) ◽  
pp. 092109 ◽  
Author(s):  
B. V. Olson ◽  
E. A. Shaner ◽  
J. K. Kim ◽  
J. F. Klem ◽  
S. D. Hawkins ◽  
...  
Keyword(s):  
Minority Carrier ◽  
Optical Measurements ◽  
Time Resolved ◽  
Carrier Recombination

Characterization of Minority-Carrier Hole Transport in Nitride-Based Light-Emitting Diodes with Optical and Electrical Time-Resolved Techniques

2004 ◽  
Vol 831 ◽  
Author(s):  
R. J. Kaplar ◽  
S. R. Kurtz ◽  
D. D. Koleske ◽  
A. A. Allerman ◽  
A. J. Fischer ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Minority Carrier ◽  
Hole Transport ◽  
Optical Measurements ◽  
Hole Density ◽  
Transport Parameters ◽  
Two Phase ◽  
Time Resolved ◽  
Light Emitting ◽  
Order Of Magnitude

ABSTRACTForward-to-reverse bias step-recovery measurements were performed on In.07Ga.93N/GaN and Al.36Ga.64N/Al.46Ga.54N quantum-well (QW) light-emitting diodes grown on sapphire. With the QW sampling the minority-carrier hole density at a single position, distinctive two-phase optical decay curves were observed. Using diffusion equation solutions to self-consistently model both the electrical and optical responses, hole transport parameters τp = 758 ± 44 ns, Lp = 588 ± 45 nm, and μp = 0.18 ± 0.02 cm2/Vs were obtained for GaN. The mobility was thermally activated with an activation energy of 52 meV, suggesting trap-modulated transport. Optical measurements of sub-bandgap peaks exhibited slow responses approaching the bulk lifetime. For Al.46Ga.54N, a longer lifetime of τp = 3.0 μs was observed, and the diffusion length was shorter, Lp ≈ 280 nm. Mobility was an order of magnitude smaller than in GaN, μp ≈ 10−2 cm2/Vs, and was insensitive to temperature, suggesting hole transport through a network of defects.

Light Effects on Grain Boundary Properties in Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
L. J. Cheng ◽  
C. M. Shyu
Keyword(s):  
Experimental Data ◽  
Grain Boundary ◽  
Minority Carrier ◽  
State Density ◽  
Boundary State ◽  
Carrier Recombination ◽  
Boundary Properties ◽  
Light Effects ◽  
Recombination Velocity ◽  
P Type

ABSTRACTWe have studied the photoconductivity of grain boundaries in p–type silicon. The result demonstrates the applicability of the technique for the measurement of minority carrier recombination velocity at the grain boundary. The experimental data are consistent with the thought that the recombination velocity increases with the boundary state density and light intensity.

Correlation of Fe-Rich Defect Centre and Minority Carrier Lifetime in p-Type Multicrystalline Silicon

2013 ◽  
Vol 440 ◽  
pp. 82-87 ◽  
Author(s):  
Mohammad Jahangir Alam ◽  
Mohammad Ziaur Rahman
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Multicrystalline Silicon ◽  
Recombination Lifetime ◽  
Spatially Resolved ◽  
Carrier Recombination ◽  
Negative Role ◽  
P Type ◽  
The Impact

A comparative study has been made to analyze the impact of interstitial iron in minority carrier lifetime of multicrystalline silicon (mc-Si). It is shown that iron plays a negative role and is considered very detrimental for minority carrier recombination lifetime. The analytical results of this study are aligned with the spatially resolved imaging analysis of iron rich mc-Si.

scholarly journals Microcharacterization of Interfaces

1982 ◽  
Vol 18 ◽  
Author(s):  
P. M. PETROFF
Keyword(s):  
Phase Contrast ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Carrier Recombination ◽  
Roughening Transition ◽  
Semiconductor Heterostructure ◽  
Transmission Electron ◽  
Quantum Well Wire ◽  
Interfacial Strain

The atomic structure of semiconductor heterostructure interfaces and metalsemiconductor interfaces are best characterized by transmission electron microscopy (TEM). Both phase contrast TEM and structure factor contrast TEM are able to distinguish very small structural (two monolayers) or compositional (less than 0.2%) fluctuations at interfaces. Applications of these techniques to the study of the roughening transition temperature at the Gal−xAlxAs–GaAs and Ga1−xAlxAs–Ge interfaces grown by molecular beam epitaxy are presented. Minority carrier recombination at interfaces is characterized on a microscopic scale by low temperature cathodoluminescence. This technique is used to demonstrate the role of interfaces in gettering defects in Gal1−xAlxAs/GaAs heterostructures. Finally, the effects of interfacial strain in producing a localization of the luminescence in GaAs quantum well wire structures will be discussed.

Minority carrier recombination in post-growth hydrogenated AlGaAs

1993 ◽  
Vol 8 (2) ◽  
pp. 224-229 ◽  
Author(s):  
G Oelgart ◽  
G Grummt ◽  
M Proctor ◽  
F -K Reinhart
Keyword(s):  
Minority Carrier ◽  
Carrier Recombination

scholarly journals Instrument response function acquisition in reflectance geometry for time-resolved diffuse optical measurements

2019 ◽  
Vol 11 (1) ◽  
pp. 240 ◽  
Author(s):  
Ileana Pirovano ◽  
Rebecca Re ◽  
Alessia Candeo ◽  
Davide Contini ◽  
Alessandro Torricelli ◽  
...  
Keyword(s):  
Response Function ◽  
Optical Measurements ◽  
Time Resolved ◽  
Instrument Response Function ◽  
Instrument Response

Solidification of highly undercooled liquid silicon produced by pulsed laser melting of ion-implanted amorphous silicon: Time-resolved and microstructural studies

1987 ◽  
Vol 2 (5) ◽  
pp. 648-680 ◽  
Author(s):  
D. H. Lowndes ◽  
S. J. Pennycook ◽  
G. E. Jellison ◽  
S. P. Withrow ◽  
D. N. Mashburn
Keyword(s):  
Pulsed Laser ◽  
Optical Measurements ◽  
Undercooled Liquid ◽  
Laser Melting ◽  
Time Resolved ◽  
Fine Grained ◽  
Explosive Crystallization ◽  
Epitaxial Regrowth ◽  
Surface Melt ◽  
Melt Duration

Nanosecond resolution time-resolved visible (632.8 nm) and infrared (1152 nm) reflectivity measurements, together with structural and Z-contrast transmission electron microscope (TEM) imaging, have been used to study pulsed laser melting and subsequent solidification of thick (190–410 nm) amorphous (a) Si layers produced by ion implantation. Melting was initiated using a KrF (248 nm) excimer laser of relatively long [45 ns full width half maximum (FWHM)] pulse duration; the microstructural and time-resolved measurements cover the entire energy density (E1) range from the onset of melting (at ∼ 0.12J/cm2) up to the onset of epitaxial regrowth (at ∼ 1.1 J/cm2). At low E1 the infrared reflectivity measurements were used to determine the time of formation, the velocity, and the final depth of “explosively” propagating buried liquid layers in 410 nm thick a-Si specimens that had been uniformly implanted with Si, Ge, or Cu over their upper ∼ 300 nm. Measured velocities lie in the 8–14 m/s range, with generally higher velocities obtained for the Ge- and Cu-implanted “a-Si alloys.” The velocity measurements result in an upper limit of 17 (± 3) K on the undercooling versus velocity relationship for an undercooled solidfying liquid-crystalline Si interface. The Z-contrast scanning TEM measurements of the final buried layer depth were in excellent agreement with the optical measurements. The TEM study also shows that the “fine-grained polycrystalline Si” region produced by explosive crystallization of a-Si actually contains large numbers of disk-shaped Si flakes that can be seen only in plan view. These Si flakes have highly amorphous centers and laterally increasing crystallinity; they apparently grow primarily in the lateral direction. Flakes having this structure were found both at the surface, at low laser E1, and also deep beneath the surface, throughout the “fine-grained poly-Si” region formed by explosive crystallization, at higher E1. Our conclusion that this region is partially amorphous (the centers of flakes) differs from earlier results. The combined structural and optical measurements suggest that Si flakes nucleate at the undercooled liquid-amorphous interface and are the crystallization events that initiate explosive crystallization. Time-resolved reflectivity measurements reveal that the surface melt duration of the 410 nm thick a-Si specimens increases rapidly for 0.3E1 <0.6 J/cm2, but then remains nearly constant for E1 up to ∼ 1.0 J/cm2. For 0.3 < E1 < 0.6 J/cm2 the reflectivity exhibits a slowly decaying behavior as the near-surface pool of liquid Si fills up with growing large grains of Si. For higher E1, a flat-topped reflectivity signal is obtained and the microstructural and optical studies together show that the principal process occurring is increasingly deep melting followed by more uniform regrowth of large grains back to the surface. However, cross-section TEM shows that a thin layer of fine-grained poly-Si still is formed deep beneath the surface for E1<0.9 J/cm2, implying that explosive crystallization occurs (probably early in the laser pulse) even at these high E1 values. The onset of epitaxial regrowth at E1 = 1.1 J/cm2 is marked by a slight decrease in surface melt duration.

Detecting Basal Plane Dislocations Converted in Highly Doped Epilayers

2019 ◽  
Vol 963 ◽  
pp. 272-275
Author(s):  
Yoshitaka Nishihara ◽  
Koji Kamei ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
Silicon Carbide ◽  
Basal Plane ◽  
Near Infrared ◽  
Minority Carrier ◽  
Pin Diode ◽  
Forward Voltage ◽  
Carrier Recombination ◽  
Near Ultraviolet ◽  
Bipolar Devices ◽  
Voltage Degradation

Suppression of the forward voltage degradation is essential in fabricating bipolar devices on silicon carbide. Using a highly N–doped 4H–epilayer as an enhancing minority carrier recombination layer is a powerful tool for reducing the expansion of BPDs converted at the epi/sub interface; however, these BPDs cannot be observed by using the near–infrared photoluminescence in the layer. Near–ultraviolet photoluminescence was instead used to detect BPDs as dark lines. In addition, a short BPD converted near the epi/sub interface and contributing to the degradation was detected. When this evaluation was applied to the fabrication of a pin diode including a highly N–doped 4H–epilayer, the Vf shift was suppressed in comparison with that in a diode without the layer.

Evaluation of Suppressing Forward Voltage Degradation by Using a Low BPD Density Substrate or an Epitaxial Wafer with an HNDE

2020 ◽  
Vol 1004 ◽  
pp. 439-444
Author(s):  
Yoshitaka Nishihara ◽  
Koji Kamei ◽  
Kenji Momose ◽  
Hiroshi Osawa
Keyword(s):  
Field Effect Transistor ◽  
Minority Carrier ◽  
Oxide Semiconductor ◽  
Pin Diode ◽  
Forward Voltage ◽  
Carrier Recombination ◽  
Crucial Problem ◽  
Basal Plane Dislocation ◽  
Effect Transistor ◽  
Voltage Degradation

Forward voltage degradation is a crucial problem that must be overcome if we are to fabricate a metal-oxide semiconductor field-effect transistor (MOSFET) including a pin diode (PND) as a body diode in a silicon carbide (SiC). Previously, the basal plane dislocation (BPD) in a SiC substrate have been reduced to suppress bipolar degradation. On the other hand, an highly N-doped epilayer (HNDE) was recently fabricated that enhances the minority carrier recombination before the carrier arrives at the substrate. Although both approaches can reduce the Vf shift caused by the degradation, they should be used under different substrate conditions. When a substrate with a high BPD density is used for epitaxial growth, an HNDE is needed to realize a high-quality epitaxial wafer; however, the HNDE should not be formed on a substrate with a low BPD density.

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