Minimizing reflection losses from metallic electrodes and enhancing photovoltaic performance using the Si-micrograting solar cell with vertical sidewall electrodes

2012 ◽  
Vol 101 (10) ◽  
pp. 103902 ◽  
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Vertical Sidewall ◽  
Metallic Electrodes

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

Improving photovoltaic performance of dye-sensitized solar cell by downshift luminescence and p-doping effect of Gd2O3:Sm3+

2013 ◽  
Vol 134 ◽  
pp. 59-62 ◽  
Author(s):  
Qingbei Li ◽  
Jianming Lin ◽  
Jihuai Wu ◽  
Zhang Lan ◽  
Yue Wang ◽  
...  
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Doping Effect ◽  
Dye Sensitized Solar Cell ◽  
Dye Sensitized

c-Si (n +)/a-Si Alloy/Pd Schottky Barrier Device for the Effective Evaluation of Photovoltaic Performance of a-Si Alloy Materials

1995 ◽  
Vol 377 ◽  
Author(s):  
X. Deng ◽  
S. J. Jones ◽  
J. Evans ◽  
M. Izu
Keyword(s):  
Solar Cell ◽  
Schottky Barrier ◽  
Carrier Transport ◽  
Metal Layer ◽  
Photovoltaic Performance ◽  
Red Light ◽  
Metal Structure ◽  
Evaluation Tool ◽  
Barrier Device ◽  
Alloy Metal

ABSTRACTThe Schottky barrier device with a metal/a-Si (n+) /a-Si alloy/metal structure has been widely used as an alternative evaluation tool for the photovoltaic performance of a-Si alloy material since it more reliably reflects the carrier transport in a solar cell than the conventional material characterization tool such as PDS, CPM, and SSPG, and is easier to be fabricated compared with a complete nip solar cell. However, a multiple chamber device making system is still needed to fabricate such a device since one does not want to deposit the a-Si intrinsic material to be studied together with an n+ layer in the same chamber. We have explored the use of a Schottky barrier device deposited on heavily doped n-type crystalline wafer substrate, c-Si (n+) /a-Si alloy/metal, as an evaluation tool for a-Si alloy materials. In this device, besides the evaporation of a thin semi-transparent metal layer, only the active a-Si alloy layer needs to be deposited using the plasma enhanced or other deposition techniques. We have compared the performance of such a device with that of reference n-i-p solar cells deposited at the same time and demonstrated that the FF measured under weak red light show a good correlation between these two types of devices. Therefore the c-Si (n+) /a-Si alloy/metal device can be used as a convenient technique to reliably evaluate the material performance in a solar cell device.

scholarly journals Impact of sol aging on TiO2 compact layer and photovoltaic performance of perovskite solar cell

2016 ◽  
Vol 59 (9) ◽  
pp. 710-718 ◽  
Author(s):  
Lixue Guo ◽  
Chengbin Fei ◽  
Rong Zhang ◽  
Bo Li ◽  
Ting Shen ◽  
...  
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cell ◽  
Compact Layer

Improving Photovoltaic Performance of Dye-Sensitized Solar Cell by Modification of Photoanode With g-C3N4/TiO2 Nanofibers

2021 ◽  
Vol 68 (10) ◽  
pp. 4982-4988
Author(s):  
Yu-Hsun Nien ◽  
Zhen-Rong Yong ◽  
Jung-Chuan Chou ◽  
Chih-Hsien Lai ◽  
Po-Yu Kuo ◽  
...  
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Dye Sensitized Solar Cell ◽  
Tio2 Nanofibers ◽  
Dye Sensitized

scholarly journals Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Seung Ki Baek ◽  
Ki Ryong Lee ◽  
Hyung Koun Cho
Keyword(s):  
Solar Cell ◽  
Photovoltaic Performance ◽  
Wavelength Region ◽  
Chemical Vapor ◽  
Zno Nanowires ◽  
Organic Chemical ◽  
Glass Substrates ◽  
Constant Ph ◽  
Ito Glass ◽  
P Type

Oxide p-n heterojunction devices consisting of p-Cu2O/n-ZnO nanowires were fabricated on ITO/glass substrates and their photovoltaic performances were investigated. The vertically arrayed ZnO nanowires were grown by metal organic chemical vapor deposition, which was followed by the electrodeposition of the p-type Cu2O layer. Prior to the fabrication of solar cells, the effect of bath pH on properties of the absorber layers was studied to determine the optimal condition of the Cu2O electrodeposition process. With the constant pH 11 solution, the Cu2O layer preferred the (111) orientation, which gave low electrical resistivity and high optical absorption. The Cu2O (pH 11)/ZnO nanowire-based solar cell exhibited a higher conversion efficiency of 0.27% than the planar structure solar cell (0.13%), because of the effective charge collection in the long wavelength region and because of the enhanced junction area.

Numerical Simulation of Single Junction InGaN Solar Cell by SCAPS

2019 ◽  
Vol 821 ◽  
pp. 407-413 ◽  
Author(s):  
Mohamed Orabi Moustafa ◽  
Tariq Alzoubi
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Collection Efficiency ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Surface Recombination ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Bandgap Energy ◽  
Single Junction

The performance of the InGaN single-junction thin film solar cells has been analyzed numerically employing the Solar Cell Capacitance Simulator (SCAPS-1D). The electrical properties and the photovoltaic performance of the InGaN solar cells were studied by changing the doping concentrations and the bandgap energy along with each layer, i.e. n-and p-InGaN layers. The results reveal an optimum efficiency of the InGaN solar cell of ~ 15.32 % at a band gap value of 1.32 eV. It has been observed that lowering the doping concentration NA leads to an improvement of the short circuit current density (Jsc) (34 mA/cm2 at NA of 1016 cm−3). This might be attributed to the increase of the carrier mobility and hence an enhancement in the minority carrier diffusion length leading to a better collection efficiency. Additionally, the results show that increasing the front layer thickness of the InGaN leads to an increase in the Jsc and to the conversion efficiency (η). This has been referred to the increase in the photogenerated current, as well as to the less surface recombination rate.

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