scholarly journals Oxide p-n Heterojunction of Cu2O/ZnO Nanowires and Their Photovoltaic Performance

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Seung Ki Baek ◽  
Ki Ryong Lee ◽  
Hyung Koun Cho

Oxide p-n heterojunction devices consisting of p-Cu2O/n-ZnO nanowires were fabricated on ITO/glass substrates and their photovoltaic performances were investigated. The vertically arrayed ZnO nanowires were grown by metal organic chemical vapor deposition, which was followed by the electrodeposition of the p-type Cu2O layer. Prior to the fabrication of solar cells, the effect of bath pH on properties of the absorber layers was studied to determine the optimal condition of the Cu2O electrodeposition process. With the constant pH 11 solution, the Cu2O layer preferred the (111) orientation, which gave low electrical resistivity and high optical absorption. The Cu2O (pH 11)/ZnO nanowire-based solar cell exhibited a higher conversion efficiency of 0.27% than the planar structure solar cell (0.13%), because of the effective charge collection in the long wavelength region and because of the enhanced junction area.

1997 ◽  
Vol 471 ◽  
Author(s):  
D. Endisch ◽  
K. Barth ◽  
J. Lau ◽  
G. Peterson ◽  
A. E. Kaloyeros ◽  
...  

ABSTRACTSrS:Ce is an important material for full color electroluminescent (EL) flat panel displays. Using a combination of SrS:Ce/ZnS:Mn and appropriate color filters high quality full color displays have been demonstrated [1]. Major issues for commercially viable process integration of SrS:Ce are the combination of high luminance, high growth rate, and process temperatures below 600°C for compatibility with low cost glass substrates. This work describes the process development and optimization of metal-organic chemical vapor deposition (MOCVD) of SrS:Ce. MOCVD is a promising candidate for deposition of SrS:Ce because it can provide the required growth rates and allows control of crystal structure and stoichiometry. Growth of SrS:Ce was performed in the temperature range from 400°C to 530°C using Sr(tmhd)2, Ce(tmhd)4, and H2S as precursors. The structure of the SrS:Ce was found to be strongly dependent on the H2S flow. A brightness of 15 fL and an efficiency of 0.22 lm/W has been achieved (40 V above threshold voltage, 60 Hz AC). Film analysis included Rutherford backscattering (RBS), X-ray diffraction (XRD), atomic force microscopy (AFM), and EL measurements. Results on the correlation between process parameters, film structure, grain size and EL performance will be presented.


2013 ◽  
Vol 1538 ◽  
pp. 275-280
Author(s):  
S.L. Rugen-Hankey ◽  
V. Barrioz ◽  
A. J. Clayton ◽  
G. Kartopu ◽  
S.J.C. Irvine ◽  
...  

ABSTRACTThin film deposition process and integrated scribing technologies are key to forming large area Cadmium Telluride (CdTe) modules. In this paper, baseline Cd1-xZnxS/CdTe solar cells were deposited by atmospheric-pressure metal organic chemical vapor deposition (AP-MOCVD) onto commercially available ITO coated boro-aluminosilicate glass substrates. Thermally evaporated gold contacts were compared with a screen printed stack of carbon/silver back contacts in order to move towards large area modules. P2 laser scribing parameters have been reported along with a comparison of mechanical and laser scribing process for the scribe lines, using a UV Nd:YAG laser at 355 nm and 532 nm fiber laser.


2016 ◽  
Vol 19 (2) ◽  
Author(s):  
MARCELLO CABIBBO ◽  
DANIELE CICCARELLI

ZnO nanowires are currently used in many application fields. Thermal stability is often a concern in terms of the mechanical response and, in particular, for the elasticity of the nanowires. Literature works focused, to a certain degree, on the nanowires heating response. Anyhow, no experimental data are nowadays available in literature on the low- and very low-temperature exposures. In the present study, deep-cryogenic treatment was performed on vertically aligned ZnO nanowires produced by metal organic chemical vapor deposition. The critical buckling stress and strain of individual nanowires was not significantly influenced by the cryogenic exposure, while the bulk ZnO halved.


1989 ◽  
Vol 145 ◽  
Author(s):  
V. S. Sundaram ◽  
J. E. Avery ◽  
G. R. Girard ◽  
H. E. Hager ◽  
A. G. Thompson ◽  
...  

AbstractUsing an alternate arsenic source, namely, Tertiary Butyl Arsine, a concentrator GaAs solar cell has been grown in a low pressure metal organic chemical vapor deposition reactor. Under 72 sun, air mass 1.5 illumination, the cell had an open circuit voltage of 1.1 V, a fill factor of 83% and an overall efficiency of 21%.


1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4595-4602 ◽  
Author(s):  
Aurangzeb Khan ◽  
Mohd Zafar Iqbal ◽  
Umar Saeed Qurashi ◽  
Masafumi Yamaguchi ◽  
Nasim Zafar ◽  
...  

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