Effects of hydrostatic pressure on the self-polarization in GaAs/Ga1−x Alx As quantum wells under the electric field

2009 ◽  
Vol 42 (2) ◽  
pp. 136-140 ◽  
Author(s):  
I. Erdogan ◽  
O. Akankan ◽  
H. Akbas
2021 ◽  
Vol 16 (1) ◽  
pp. 97-103
Author(s):  
Xin-Nan Li ◽  
Guang-Xin Wang ◽  
Xiu-Zhi Duan

A variational approach is utilized to investigated the electron-impurity interaction in zinc-blende (In,Ga)N-GaN strained coupled quantum wells. The donor imputrity states are studied in consideration of the effects of hydrostatic pressure and external electric field. Our results indicate that the binding energy visibly depends on hydrostatic pressure, strain of coupled quantum wells, and applied electric field. The binding energy demonstrates a peak value with the reduction of the left-well width, and which displays a minimum value with the increment of the middle-barrier width. A decreasing behavior on the binding energy is also demonstrated when the right-well width enhances. Also the binding energy augments constantly with the increasing hydrostatic pressure. Besides, the dependency of the binding energy on variation of impurity position has been analyzed detailedly.


2012 ◽  
Vol 112 (5) ◽  
pp. 053509 ◽  
Author(s):  
T. Suski ◽  
S. P. Łepkowski ◽  
G. Staszczak ◽  
R. Czernecki ◽  
P. Perlin ◽  
...  

2016 ◽  
Vol 119 (21) ◽  
pp. 215702 ◽  
Author(s):  
Henryk Teisseyre ◽  
Agata Kaminska ◽  
Stefan Birner ◽  
Toby D. Young ◽  
Andrzej Suchocki ◽  
...  

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