Low-temperature formation of epitaxial graphene on 6H-SiC induced by continuous electron beam irradiation

2012 ◽  
Vol 101 (9) ◽  
pp. 092105 ◽  
Author(s):  
Heungseok Go ◽  
Jinsung Kwak ◽  
Youngeun Jeon ◽  
Sung-Dae Kim ◽  
Byung Cheol Lee ◽  
...  
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electron Beam Irradiation ◽  
Epitaxial Graphene ◽  
Beam Irradiation

Superconducting Effects in Rapidly Quenched Materials Formed by Ion and Laser Bombardment

1981 ◽  
Vol 4 ◽  
Author(s):  
Bernd Stritzker
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Electron Beam Irradiation ◽  
Pulsed Laser ◽  
Ion Bombardment ◽  
Heavy Ion ◽  
Superconducting Properties ◽  
Beam Irradiation ◽  
Metastable Alloys ◽  
Vapor Quenching

ABSTRACTThe application of low temperature ion bombardment and pulsed laser or electron beam irradiation for the production of rapidly quenched superconducting alloys is described and compared with other more conventionally used non-equilibrium techniques. The comparison is based on the identification of the metastable phases produced by their specific electrical and superconducting properties. It is concluded that low temperature heavy ion bombardment is comparable with vapor quenching whereas laser quenching yields results similar to liquid quenching. Finally, the interesting superconducting properties of these rapidly quenched metastable alloys are discussed.

Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

2014 ◽  
Vol 105 (18) ◽  
pp. 181601 ◽  
Author(s):  
P. Dharmaraj ◽  
K. Jeganathan ◽  
S. Parthiban ◽  
J. Y. Kwon ◽  
S. Gautam ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Epitaxial Graphene ◽  
Selective Area Growth ◽  
Beam Irradiation ◽  
Selective Area ◽  
Area Growth

Study thermodynamic assessment of the B-C and B-Si binary systems with swift heavy ions and high intense electron beam irradiation at the low temperature

2020 ◽  
Vol 34 (34) ◽  
pp. 2050395
Author(s):  
Matlab N. Mirzayev
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Heavy Ions ◽  
Electron Beam Irradiation ◽  
Electron Beams ◽  
High Energy ◽  
Beam Irradiation ◽  
Swift Heavy Ions ◽  
Intense Electron Beam ◽  
Intense Electron

B4C and B6Si samples have been irradiated by using swift heavy ions and high intense electron beam. Ion irradiation of the samples was carried at the different electron fluences [Formula: see text], [Formula: see text] and [Formula: see text] cm[Formula: see text] ion/cm2, and energy of ions flux 167 MeV. Also, the samples were irradiated with high energy electron beams at the linear electronic accelerator at different electron fluencies up to [Formula: see text] cm[Formula: see text] and energy of electron beams 2.5 MeV and current density of electron beams [Formula: see text]s. The unirradiation and irradiation of the thermodynamic kinetics of samples at low-temperature change with a differential mechanism. In the DSC curves, at the low temperature for unirradiation and irradiation, boron carbide and boron silicide samples do not undergo phase transition. But at the [Formula: see text] K temperature range, the thermodynamic mechanism of ions and electron beam irradiation are very difficult and measuring the temperature of conductivity, thermal conductivity, calibration factor, specific heat capacity becomes more complicated.

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