ChemInform Abstract: Growth of GaN Layers on Sapphire by Low-Temperature-Deposited Buffer Layers and Realization of p-Type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)
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2015 ◽
Vol 54
(27)
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pp. 7764-7769
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2015 ◽
Vol 87
(4)
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pp. 1133-1138
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2015 ◽
Vol 29
(32)
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pp. 1530015
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1995 ◽
Vol 34
(Part 2, No. 3B)
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pp. L339-L341
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