Enhanced thermal conductivity of polycrystalline aluminum nitride thin films by optimizing the interface structure

2012 ◽  
Vol 112 (4) ◽  
pp. 044905 ◽  
Author(s):  
T. S. Pan ◽  
Y. Zhang ◽  
J. Huang ◽  
B. Zeng ◽  
D. H. Hong ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Interface Structure ◽  
Polycrystalline Aluminum ◽  
Enhanced Thermal Conductivity

Substrate-dependent thermal conductivity of aluminum nitride thin-films processed at low temperature

2014 ◽  
Vol 105 (22) ◽  
pp. 221905 ◽  
Author(s):  
B. E. Belkerk ◽  
S. Bensalem ◽  
A. Soussou ◽  
M. Carette ◽  
H. Al Brithen ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Low Temperature ◽  
Aluminum Nitride

Pulsed photothermal reflectance measurement of the thermal conductivity of sputtered aluminum nitride thin films

2004 ◽  
Vol 96 (8) ◽  
pp. 4563-4568 ◽  
Author(s):  
Yimin Zhao ◽  
Chunlin Zhu ◽  
Sigen Wang ◽  
J. Z. Tian ◽  
D. J. Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Reflectance Measurement

Enhanced thermal conductivity of epoxy composites by constructing aluminum nitride honeycomb reinforcements

2020 ◽  
Vol 199 ◽  
pp. 108304 ◽  
Author(s):  
Zhilei Wei ◽  
Wenqi Xie ◽  
Bangzhi Ge ◽  
Zhejian Zhang ◽  
Wanli Yang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Epoxy Composites ◽  
Enhanced Thermal Conductivity

Microstructural Effects on the Thermal Conductivity of Polycrystalline Aluminum Nitride

1991 ◽  
Vol 74 (9) ◽  
pp. 2214-2219 ◽  
Author(s):  
Jack H. Enloe ◽  
Roy W. Rice ◽  
John W. Lau ◽  
R. Kumar ◽  
S.Y. Lee
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Polycrystalline Aluminum ◽  
Microstructural Effects

scholarly journals High In-Plane Thermal Conductivity of Aluminum Nitride Thin Films

ACS Nano ◽  
2021 ◽  
Author(s):  
Md Shafkat Bin Hoque ◽  
Yee Rui Koh ◽  
Jeffrey L. Braun ◽  
Abdullah Mamun ◽  
Zeyu Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Aluminum Nitride

High Quality AlN Thin Films Deposited by Middle-Frequency Magnetron Sputtering at Room Temperature

2014 ◽  
Vol 787 ◽  
pp. 227-231 ◽  
Author(s):  
Chuan Li ◽  
Lin Shu ◽  
Li Jun He ◽  
Xing Zhao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Room Temperature ◽  
Residual Tensile Stress ◽  
High Quality ◽  
Polycrystalline Aluminum ◽  
Aln Buffer

A study of depositing high quality c-axis oriented polycrystalline aluminum nitride thin film at room temperature was presented. Aluminum nitride films were grown by mid-frequency (MF) reactive sputtering. Metallic aluminum target was used to deposit AlN films in Ar/N2 gas mixture. A 50nm thick of N-rich AlN buffer layer was deposited at the initial stage of sputtering process to improve the film quality. The composition, preferred orientation and residual stress of the films were analyzed by EDS, XRD and Raman microscope, respectively. The results showed that the N-rich AlN buffer layer improved the textured degree and reduced the residual stress significantly of the AlN thin films. The near stoichiometric AlN thin film with highly textured degree was obtained. The FWHM value of the rocking curve for (0002) diffraction peak was about 1.6°, and the residual tensile stress was about 500MPa. The piezoelectric d33 coefficient increased with the decreasing of FWHM value, and the highest d33 coefficient of 3.6 pF/C was obtained.

Sign in / Sign up

Export Citation Format

Share Document