Nonvolatile memory thin film transistors using CdSe/ZnS quantum dot-poly(methyl methacrylate) composite layer formed by a two-step spin coating technique

2012 ◽  
Vol 112 (3) ◽  
pp. 034518 ◽  
Author(s):  
Ying-Chih Chen ◽  
Chun-Yuan Huang ◽  
Hsin-Chieh Yu ◽  
Yan-Kuin Su
2018 ◽  
Vol 5 (1) ◽  
pp. 20-22
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundari C ◽  
Punithavathi K

Thin films of poly (methyl methacrylate) (PMMA) were prepared on cleaned glass slides by using spin coating technique. The prepared films were identified by using FTIR spectrum. Surface morphology of the coated films was studied by using SEM and AFM. Both as grown and annealed films showed smooth and amorphous structure. It also revealed the absence of pits, pin holes and dendritic features in the surface. Both as grown and annealed films showed very low RMS roughness value. The morphology analysis revealed that the prepared film could be used as dielectric layer in thin film transistors and as drug delivery system forwound healing.


2013 ◽  
Vol 14 (9) ◽  
pp. 2101-2107 ◽  
Author(s):  
Jaehoon Park ◽  
Lee-Mi Do ◽  
Jin-Hyuk Bae ◽  
Ye-Sul Jeong ◽  
Christopher Pearson ◽  
...  

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.


2016 ◽  
Author(s):  
K. A. Bogle ◽  
R. D. Narwade ◽  
A. B. Phatangare ◽  
S. S. Dahiwale ◽  
M. P. Mahabole ◽  
...  

2018 ◽  
Vol 33 (22) ◽  
pp. 3880-3889 ◽  
Author(s):  
Mohd. Shkir ◽  
Mohd. Arif ◽  
Vanga Ganesh ◽  
Mohamed A. Manthrammel ◽  
Arun Singh ◽  
...  

Abstract


2019 ◽  
Vol 6 (1) ◽  
pp. 1
Author(s):  
Susilawati Susilawati ◽  
Aris Doyan ◽  
Lalu Muliyadi ◽  
Syamsul Hakim

Abstract: The growth of tin oxide thin film by Aluminum doping and Fluorine has been carried out with the sol-gel spin coating technique. The growth aims to determine the quality of the thin layer formed based on variations in doping aluminum and fluorine. The basic ingredients used were SnCl2.2H2O, while the doping materials used were Al (Aluminium) and F (Fluorine) with variations in dopant concentrations (0, 5, 10, 15, 20 and 25)%. The growth of a thin layer using measured glass (10x10x 3) mm as a substrate. The growth of thin films includes substrate preparation, sol-gel making, thin film making, and heating processes. The growth of thin layer was dripped on a glass substrate with sol-gel spin coating technique at 1 M sol concentration and treated with maturation for 24 hours. The next step is making a thin layer using a spin coater at a speed of 2000 rpm for 3 minutes. After that, the substrate is heated in an oven at 100°C for 60 minutes. The results showed that the transparency level of the tin oxide layer increases with increasing amounts of doping Aluminum and fluorine. Key words: Aluminum, Fluorine, Sol-gel, Spin Coating, Thin Film, Tin Oxide


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