Molecular beam study of the collisions of state-monitored, metastable noble gas atoms with O2(X 3Σg−)

1997 ◽  
Vol 106 (8) ◽  
pp. 3135-3145 ◽  
Author(s):  
Dawn Rickey ◽  
John Krenos
Keyword(s):  
Molecular Beam ◽  
Noble Gas

Insight into the halogen-bond nature of noble gas-chlorine systems by molecular beam scattering experiments, ab initio calculations and charge displacement analysis

2019 ◽  
Vol 21 (14) ◽  
pp. 7330-7340 ◽  
Author(s):  
Francesca Nunzi ◽  
Diego Cesario ◽  
Leonardo Belpassi ◽  
Francesco Tarantelli ◽  
Luiz F. Roncaratti ◽  
...  
Keyword(s):  
Charge Transfer ◽  
Ab Initio Calculations ◽  
Ab Initio ◽  
Molecular Beam ◽  
Halogen Bond ◽  
Noble Gas ◽  
Molecular Beam Scattering ◽  
Beam Scattering ◽  
Charge Displacement ◽  
Insight Into

A weak halogen bond, together with charge transfer from a noble gas to Cl2, characterizes the intermolecular interaction between a noble gas atom and Cl2 in a collinear configuration.

Molecular beam study of van der Waals bond exchange in collisions of noble gas atoms and dimers

1986 ◽  
Vol 90 (21) ◽  
pp. 5121-5130 ◽  
Author(s):  
D. R. Worsnop ◽  
S. J. Buelow ◽  
D. R. Herschbach
Keyword(s):  
Molecular Beam ◽  
Noble Gas ◽  
Van Der Waals ◽  
Van Der Waals Bond

Study of the Intermolecular Potentials for Hydrogen–Noble Gas Pairs via Molecular Beam Differential Scattering Measurements

1975 ◽  
Vol 53 (5) ◽  
pp. 435-444 ◽  
Author(s):  
R. W. Bickes Jr. ◽  
G. Scoles ◽  
K. M. Smith
Keyword(s):  
Cross Sections ◽  
Molecular Beam ◽  
Noble Gas ◽  
Intermolecular Potentials ◽  
Yield Model ◽  
Lennard Jones ◽  
Scattering Measurements ◽  
Collision Cross Sections ◽  
Model Independent ◽  
Best Fit

Differential collision cross sections for H2–noble gas pairs have been measured and analyzed via a best fit procedure. The data are well described by Lennard–Jones (12,6) (LJ) and Buckingham–Corner (BC) potentials and yield model independent values for σ, the location of the zero of the potential. For H2–Ne, H2–Ar, and H2–Kr, σ values are respectively 2.85, 3.07, and 3.21 Å, with uncertainties [Formula: see text].

Effect of noble gas plasmas on the growth of InP by gas-source molecular beam epitaxy

1996 ◽  
pp. 769-772 ◽  
Author(s):  
D.A. Thompson ◽  
D.B. Mitchell ◽  
B.J. Robinson ◽  
R.R. LaPierre ◽  
P Mascher
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Noble Gas ◽  
Gas Source

scholarly journals Molecular Beam Scattering Experiments as a Sensitive Probe of the Interaction in Bromine–Noble Gas Complexes

2019 ◽  
Vol 7 ◽  
Author(s):  
David Cappelletti ◽  
Antonio Cinti ◽  
Andrea Nicoziani ◽  
Stefano Falcinelli ◽  
Fernando Pirani
Keyword(s):  
Molecular Beam ◽  
Noble Gas ◽  
Molecular Beam Scattering ◽  
Beam Scattering

Molecular-beam study of the ammonia–noble gas systems: Characterization of the isotropic interaction and insights into the nature of the intermolecular potential

2011 ◽  
Vol 135 (19) ◽  
pp. 194301 ◽  
Author(s):  
Fernando Pirani ◽  
Luiz F. Roncaratti ◽  
Leonardo Belpassi ◽  
Francesco Tarantelli ◽  
D. Cappelletti
Keyword(s):  
Molecular Beam ◽  
Noble Gas ◽  
Intermolecular Potential

Defects in Heavily-Doped MBE GaAs

1982 ◽  
Vol 40 ◽  
pp. 442-445
Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heavily Doped

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.

STM studies of crystal growth

1991 ◽  
Vol 49 ◽  
pp. 374-375
Author(s):  
M. G. Lagally
Keyword(s):  
Crystal Growth ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Sputter Deposition ◽  
Field Of View ◽  
Scanning Tunneling ◽  
Wide Field ◽  
Tunneling Microscopy ◽  
Wide Field Of View ◽  
The One

It has been recognized since the earliest days of crystal growth that kinetic processes of all Kinds control the nature of the growth. As the technology of crystal growth has become ever more refined, with the advent of such atomistic processes as molecular beam epitaxy, chemical vapor deposition, sputter deposition, and plasma enhanced techniques for the creation of “crystals” as little as one or a few atomic layers thick, multilayer structures, and novel materials combinations, the need to understand the mechanisms controlling the growth process is becoming more critical. Unfortunately, available techniques have not lent themselves well to obtaining a truly microscopic picture of such processes. Because of its atomic resolution on the one hand, and the achievable wide field of view on the other (of the order of micrometers) scanning tunneling microscopy (STM) gives us this opportunity. In this talk, we briefly review the types of growth kinetics measurements that can be made using STM. The use of STM for studies of kinetics is one of the more recent applications of what is itself still a very young field.

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