Electronic properties of the Cu2ZnSn(Se,S)4 absorber layer in solar cells as revealed by admittance spectroscopy and related methods

2012 ◽  
Vol 100 (25) ◽  
pp. 253905 ◽  
Author(s):  
Oki Gunawan ◽  
Tayfun Gokmen ◽  
Charles W. Warren ◽  
J. David Cohen ◽  
Teodor K. Todorov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electronic Properties ◽  
Absorber Layer ◽  
Admittance Spectroscopy

Unveiling the effects of post-deposition treatment with different alkaline elements on the electronic properties of CIGS thin film solar cells

2014 ◽  
Vol 16 (19) ◽  
pp. 8843 ◽  
Author(s):  
Fabian Pianezzi ◽  
Patrick Reinhard ◽  
Adrian Chirilă ◽  
Benjamin Bissig ◽  
Shiro Nishiwaki ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electronic Properties ◽  
Thin Film Solar Cells ◽  
Cigs Thin Film ◽  
Post Deposition

Schottky Solar Cells with CuInS2 Nanocrystals as Absorber Material

2015 ◽  
Vol 229 (1-2) ◽  
Author(s):  
Holger Borchert ◽  
Dorothea Scheunemann ◽  
Katja Frevert ◽  
Florian Witt ◽  
Andreas Klein ◽  
...  
Keyword(s):  
Solar Cells ◽  
Semiconductor Nanocrystals ◽  
Absorber Layer ◽  
Limiting Factor ◽  
Device Performance ◽  
Layer By Layer ◽  
Copper Indium Disulfide ◽  
Layer Deposition ◽  
Absorber Material ◽  
Cadmium And Lead

AbstractColloidal semiconductor nanocrystals with tunable optical properties are promising materials for light harvesting in solar cells. So far, in particular cadmium and lead chalcogenide nanocrystals were intensively studied in this respect, and the device performance has made rapid progress in recent years. In contrast, less research efforts were undertaken to develop solar cells based on Cd- and Pb-free nanoparticles as absorber material. In the present work, we report on Schottky solar cells with the absorber layer made of colloidal copper indium disulfide nanocrystals. Absorber films with up to ∼ 500 nm thickness were realized by a solution-based layer-by-layer deposition technique. The device performance was systematically studied dependent on the absorber layer thickness. Decreasing photocurrent densities with increasing thickness revealed charge transport to be a limiting factor for the device performance.

Band-gap-graded Cu2ZnSn(S,Se)4 drives high efficient solar cells

2022 ◽  
Author(s):  
Hongling Guo ◽  
Rutao Meng ◽  
Gang Wang ◽  
Shenghao Wang ◽  
Li Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Band Gap ◽  
Light Harvesting ◽  
Absorber Layer ◽  
Photovoltaic Application ◽  
High Efficient

Fabrication of high efficient solar cells is critical for photovoltaic application. The bandgap-graded absorber layer can not only drive carriers efficient collection but also improve the light harvesting. However, it...

Improvement in the performance of CIGS solar cells by introducing GaN nanowires on the absorber layer

2019 ◽  
Vol 779 ◽  
pp. 643-647 ◽  
Author(s):  
Jae-Kwan Sim ◽  
Dae-Young Um ◽  
Jong-Woong Kim ◽  
Jin-Soo Kim ◽  
Kwang-Un Jeong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Absorber Layer ◽  
Gan Nanowires ◽  
Cigs Solar Cells

scholarly journals First-Principles Study on the Stabilities, Electronic and Optical Properties of GexSn1-xSe Alloys

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 876 ◽  
Author(s):  
Qi Qian ◽  
Lei Peng ◽  
Yu Cui ◽  
Liping Sun ◽  
Jinyan Du ◽  
...  
Keyword(s):  
Optical Properties ◽  
Solar Cells ◽  
Band Gap ◽  
Electronic Properties ◽  
First Principles ◽  
Future Application ◽  
First Principles Calculations ◽  
Electronic And Optical Properties ◽  
Direct Bandgap ◽  
The Future

We systematically study, by using first-principles calculations, stabilities, electronic properties, and optical properties of GexSn1-xSe alloy made of SnSe and GeSe monolayers with different Ge concentrations x = 0.0, 0.25, 0.5, 0.75, and 1.0. Our results show that the critical solubility temperature of the alloy is around 580 K. With the increase of Ge concentration, band gap of the alloy increases nonlinearly and ranges from 0.92 to 1.13 eV at the PBE level and 1.39 to 1.59 eV at the HSE06 level. When the Ge concentration x is more than 0.5, the alloy changes into a direct bandgap semiconductor; the band gap ranges from 1.06 to 1.13 eV at the PBE level and 1.50 to 1.59 eV at the HSE06 level, which falls within the range of the optimum band gap for solar cells. Further optical calculations verify that, through alloying, the optical properties can be improved by subtle controlling the compositions. Since GexSn1-xSe alloys with different compositions have been successfully fabricated in experiments, we hope these insights will contribute to the future application in optoelectronics.

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